Display device

ABSTRACT

A liquid crystal display device includes a transmissive region and a reflective region. The liquid crystal display device includes a liquid crystal element, a transistor, a scan line, a signal line, and an insulating layer. A semiconductor layer of the transistor includes a channel region and a low-resistance region. A channel region overlaps with a gate with a gate insulating layer provided therebetween. The low-resistance region includes a first portion in contact with a pixel electrode of the liquid crystal element and a second portion in contact with a side surface of an opening portion in the insulating layer. The first portion of the low-resistance region is positioned in the transmissive region or the reflective region. The reflective region includes a layer that reflects visible light. The layer that reflects visible light includes a portion positioned between the scan line or the signal line and a liquid crystal layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

An embodiment of the present invention relates to a liquid crystaldisplay device. In addition, an embodiment of the present inventionrelates to a separation method.

Note that one embodiment of the present invention is not limited to theabove technical field. Examples of the technical field of one embodimentof the present invention include a semiconductor device, a displaydevice, a light-emitting device, a power storage device, a memorydevice, an electronic device, a lighting device, an input device (e.g.,a touch sensor), an input-output device (e.g., a touch panel), a drivingmethod thereof, and a manufacturing method thereof.

2. Description of the Related Art

Transistors used for most flat panel displays typified by a liquidcrystal display device and a light-emitting display device are formedusing silicon semiconductors such as amorphous silicon, single crystalsilicon, and polycrystalline silicon provided over glass substrates.Further, a transistor employing such a silicon semiconductor is used inintegrated circuits (ICs) and the like.

In recent years, attention has been drawn to a technique in which,instead of a silicon semiconductor, a metal oxide exhibitingsemiconductor characteristics is used in transistors. Note that in thisspecification, a metal oxide exhibiting semiconductor characteristics isreferred to as an oxide semiconductor. For example, in Patent Documents1 and 2, a technique is disclosed in which a transistor is manufacturedusing zinc oxide or an In—Ga—Zn-based oxide as an oxide semiconductorand the transistor is used as a switching element or the like of a pixelof a display device.

REFERENCE Patent Document

[Patent Document 1] Japanese Published Patent Application No.2007-123861

[Patent Document 2] Japanese Published Patent Application No. 2007-96055

SUMMARY OF THE INVENTION

An object of one embodiment of the present invention is to provide aliquid crystal display device with a high resolution. Another object ofone embodiment of the present invention is to provide a liquid crystaldisplay device with a high aperture ratio. Another object of oneembodiment of the present invention is to provide a liquid crystaldisplay device with low power consumption. Another object of oneembodiment of the present invention is to provide a highly reliableliquid crystal display device. Another object of one embodiment of thepresent invention is to provide a novel liquid crystal display device.

Note that the descriptions of these objects do not disturb the existenceof other objects. Note that one embodiment of the present invention doesnot necessarily achieve all the objects. Other objects can be derivedfrom the description of the specification, the drawings, and the claims.

A display device of one embodiment of the present invention includes atransmissive region and a reflective region. The display device includesa liquid crystal element, a transistor, a scan line, a signal line, alayer that reflects visible light, and a first insulating layer. Theliquid crystal element includes a pixel electrode, a common electrode,and a liquid crystal layer. The transistor includes a semiconductorlayer, a gate, and a gate insulating layer. The first insulating layeris positioned between the pixel electrode and the transistor. The firstinsulating layer includes an opening portion. The pixel electrode ispositioned between the liquid crystal layer and the first insulatinglayer. The common electrode has a function of transmitting visiblelight. The semiconductor layer includes a first region and a secondregion. The first region overlaps with the gate with the gate insulatinglayer positioned therebetween. The second region includes a firstportion in contact with the pixel electrode and a second portion incontact with a side surface of the opening portion in the firstinsulating layer. The second region has resistivity lower thanresistivity of the first region. The first portion is positioned in thetransmissive region or the reflective region. The reflective regionincludes the layer that reflects visible light. The layer that reflectsvisible light includes a portion positioned between the scan line or thesignal line and the liquid crystal layer.

For the semiconductor layer, a material that transmits visible light ora material that blocks visible light can be used.

In the case of using a material that blocks visible light for thesemiconductor layer, the second region of the semiconductor layer ispreferably positioned in the reflective region. The layer that reflectsvisible light may overlap with one or both of the pixel electrode andthe common electrode. The layer that reflects visible light may alsoserve as a pixel electrode or a common electrode. As the semiconductorlayer, a silicon semiconductor layer can be suitably used, for example.

In the case of using a material that transmits visible light for thesemiconductor layer, the second region of the semiconductor layer ispreferably positioned in the transmissive region. At this time, thepixel electrode transmits visible light. The pixel electrode may beelectrically connected to the layer that reflects visible light. Thelayer that reflects visible light may overlap with one or both of thepixel electrode and the common electrode.

A display device of one embodiment of the present invention includes atransmissive region and a reflective region. The display device includesa liquid crystal element, a transistor, a scan line, a signal line, alayer that reflects visible light, and a first insulating layer. Theliquid crystal element includes a pixel electrode, a common electrode,and a liquid crystal layer. The transistor includes an oxidesemiconductor layer, a gate, and a gate insulating layer. The firstinsulating layer is positioned between the pixel electrode and thetransistor. The first insulating layer includes an opening portion. Thepixel electrode is positioned between the liquid crystal layer and thefirst insulating layer. The pixel electrode and the common electrodeeach have a function of transmitting visible light. The oxidesemiconductor layer includes a first region and a second region. Thefirst region overlaps with the gate with the gate insulating layerpositioned therebetween. The second region includes a first portion incontact with the pixel electrode and a second portion in contact with aside surface of the opening portion in the first insulating layer, andis positioned in the transmissive region. The second region hasresistivity lower than resistivity of the first region. The reflectiveregion includes the layer that reflects visible light. The layer thatreflects visible light includes a third portion positioned between thescan line or the signal line and the liquid crystal layer. The pixelelectrode may be electrically connected to the layer that reflectsvisible light. The layer that reflects visible light may overlap withone or both of the pixel electrode and the common electrode. The layerthat reflects visible light preferably includes a fourth portionoverlapping with the first region.

In the display device having the above-described structure, it ispreferable that the pixel electrode, the common electrode, and the oxidesemiconductor layer each include indium, zinc, and at least one ofaluminum, gallium, yttrium, and tin. It is preferable that the pixelelectrode, the common electrode, and the oxide semiconductor layer eachinclude a crystal part. It is preferable that the crystal part havec-axis alignment. It is preferable that the transistor include a backgate. The back gate includes a portion overlapping with the gate withthe oxide semiconductor layer positioned therebetween. The gate and theback gate are electrically connected to each other. The gate includesindium, zinc, and at least one of aluminum, gallium, yttrium, and tin.

It is preferable that a coloring layer be further included in thedisplay device having any of the above-described structures. Thecoloring layer overlaps with the pixel electrode with the liquid crystallayer positioned therebetween. A thickness of the coloring layer in thereflective region is greater than or equal to 40% and less than or equalto 60% of a thickness of the coloring layer in the transmissive region.

In the display device having any of the above-described structures, itis preferable that a thickness of the liquid crystal layer in thereflective region be greater than or equal to 40% and less than or equalto 60% of a thickness of the liquid crystal layer in the transmissiveregion.

It is preferable that a light-blocking layer be further included in thedisplay device having any of the above-described structures. It ispreferable that the light-blocking layer be positioned at a boundarybetween the transmissive region and the reflective region.

In the display device having any of the above-described structures, itis preferable that a surface of the pixel electrode on the liquidcrystal layer side and a surface of the first insulating layer on theliquid crystal layer side form the same surface.

In the display device having any of the above-described structures, itis preferable that the common electrode be positioned between thetransistor and the liquid crystal layer.

It is preferable that the display device having any of theabove-described structures further include a second insulating layerpositioned between the pixel electrode and the common electrode. It ispreferable that a surface of the common electrode on the liquid crystallayer side and a surface of the second insulating layer on the liquidcrystal layer side form the same surface.

In the display device having any of the above-described structures, itis preferable that a direction in which the scan line extends intersectwith a direction in which the signal line extends and that a directionin which a plurality of pixels (subpixels) exhibiting the same color arearranged intersect with a direction in which the signal line extends.

One embodiment of the present invention is a module that includes adisplay device with one of the configurations described above. Themodule has a connector such as flexible printed circuit (FPC) board or atape carrier package (TCP) connected thereto, or an IC is implemented onthe module with a method such as a chip on glass (COG) method or a chipon film (COF) method.

In one embodiment of the present invention, the configurations describedabove may be applied to an input/output device such as a touch panel,instead of a display device.

One embodiment of the present invention is an electronic deviceincluding one of the modules described above, and at least one of anantenna, a battery, a housing, a camera, a speaker, a microphone, and acontrol button.

One embodiment of the present invention can provide a liquid crystaldisplay device with high resolution. Another embodiment of the presentinvention can provide a liquid crystal display device with high apertureratio. Another embodiment of the present invention can provide a liquidcrystal display device with low power consumption. Another embodiment ofthe present invention can provide a highly reliable liquid crystaldisplay device. Another object of one embodiment of the presentinvention can provide a novel liquid crystal display device.

The descriptions of these effects do not disturb the existence of othereffects, and one embodiment of the present invention does notnecessarily achieve all the effects. Other effects can be derived fromthe description of the specification, the drawings, and the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are cross-sectional views showing examples of a displaydevice.

FIG. 2A is a perspective view showing an example of a display device,and FIGS. 2B and 2C are drawings showing layout examples of pixels.

FIGS. 3A and 3B show layout examples and structure examples of pixels.

FIGS. 4A to 4D are cross-sectional views showing examples of a displaydevice.

FIGS. 5A to 5C are cross-sectional views showing examples of a displaydevice.

FIGS. 6A and 6B are cross-sectional views showing examples of a displaydevice.

FIG. 7 is a cross-sectional view showing an example of a display device.

FIGS. 8A to 8D are top views showing an example of a subpixel.

FIG. 9 is a cross-sectional view showing an example of a display device.

FIGS. 10A to 10C are top views showing an example of a subpixel.

FIGS. 11A to 11C are top views showing an example of a subpixel.

FIGS. 12A to 12C are top views showing an example of a subpixel.

FIGS. 13A and 13B are cross-sectional views showing an example of adisplay device.

FIG. 14 is a cross-sectional view showing an example of a displaydevice.

FIGS. 15A to 15C are cross-sectional views illustrating an example of afabrication method of a display device.

FIGS. 16A and 16B are cross-sectional views illustrating an example of afabrication method of a display device.

FIGS. 17A and 17B are cross-sectional views illustrating an example of afabrication method of a display device.

FIGS. 18A and 18B are cross-sectional views illustrating an example of afabrication method of a display device.

FIGS. 19A and 19B are cross-sectional views illustrating an example of afabrication method of a display device.

FIGS. 20A to 20C are cross-sectional views illustrating an example of afabrication method of a display device.

FIGS. 21A and 21B are cross-sectional views illustrating an example of afabrication method of a display device.

FIGS. 22A to 22C are cross-sectional views illustrating an example of afabrication method of a display device.

FIGS. 23A and 23B are cross-sectional views illustrating an example of afabrication method of a display device.

FIG. 24 is a cross-sectional view illustrating an example of a displaydevice.

FIGS. 25A and 25B are perspective views illustrating an example of atouch panel.

FIG. 26 is a cross-sectional view illustrating an example of a touchpanel.

FIG. 27A illustrates an example of a structure of a touch sensor, andFIG. 27B illustrates an example of a driving method of an input device.

FIGS. 28A and 28B are perspective views each illustrating an example ofa touch panel.

FIG. 29 is a cross-sectional view illustrating an example of a touchpanel.

FIG. 30 is a cross-sectional view illustrating an example of a touchpanel.

FIGS. 31A and 31B each illustrate an example of a sensing element andpixels.

FIGS. 32A to 32E illustrate an example of an operation of a sensingelement and pixels.

FIGS. 33A to 33C are top views illustrating an example of a sensingelement and a pixel.

FIGS. 34A to 34C are a top view and cross-sectional views illustratingan example of the semiconductor device.

FIGS. 35A to 35C are a top view and cross-sectional views illustratingan example of the semiconductor device.

FIGS. 36A and 36B are cross-sectional views illustrating an example of asemiconductor device.

FIGS. 37A and 37B are cross-sectional views illustrating an example of asemiconductor device.

FIGS. 38A to 38D are cross-sectional views illustrating an example of afabrication method of a semiconductor device.

FIGS. 39A to 39C are cross-sectional views each illustrating an exampleof a fabrication method of a semiconductor device.

FIGS. 40A and 40B are cross-sectional views illustrating an example of afabrication method of a semiconductor device.

FIGS. 41A to 41D are cross-sectional views illustrating an example of afabrication method of a semiconductor device.

FIGS. 42A to 42C are cross-sectional views illustrating an example of afabrication method of a semiconductor device.

FIGS. 43A to 43C are cross-sectional views illustrating an example of afabrication method of a semiconductor device.

FIG. 44 illustrates an example of a touch panel module.

FIGS. 45A to 45H each illustrate an example of an electronic device.

FIGS. 46A and 46B each illustrate an example of an electronic device.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments are described in detail with reference to the drawings. Notethat the present invention is not limited to the following description.It will be readily appreciated by those skilled in the art that modesand details of the present invention can be modified in various wayswithout departing from the spirit and scope of the present invention.Thus, the present invention should not be construed as being limited tothe description in the following embodiments and example.

Note that in the configuration of the invention described below, thesame portions or portions having similar functions are denoted by thesame reference numerals across different drawings and repetitivedescription thereof is omitted. Further, the same hatching pattern isapplied to portions having similar functions, and the portions are notespecially denoted by reference numerals in some cases.

The position, size, range, or the like of each structure illustrated indrawings is not accurately represented in some cases for easyunderstanding. Therefore, the disclosed invention is not necessarilylimited to the position, size, range, or the like disclosed in thedrawings.

Note that the terms “film” and “layer” can be used interchangeablydepending on the case or circumstances. For example, the term“conductive layer” can be changed into the term “conductive film”. Also,the term “insulating film” can be changed into the term “insulatinglayer”.

Embodiment 1

In this embodiment, a display device of one embodiment of the presentinvention and the fabrication method thereof is described with referenceto FIG. 1A to FIG. 33C.

One embodiment of the present invention is a liquid crystal displaydevice including a transmissive region and a reflective region. In thetransmissive region, display can be performed using a backlight or thelike as a light source. In the reflective region, display can beperformed using external light as a light source.

A display device of one embodiment of the present invention includes aliquid crystal element, a transistor, a scan line, a signal line, and aninsulating layer. The liquid crystal element includes a pixel electrode,a common electrode, and a liquid crystal layer. The transistor includesa semiconductor layer, a gate, and a gate insulating layer. Theinsulating layer is positioned between the pixel electrode and thetransistor. The insulating layer includes an opening portion. The pixelelectrode is positioned between the liquid crystal layer and theinsulating layer. The common electrode has a function of transmittingvisible light.

The semiconductor layer includes a channel region and a low-resistanceregion. The channel region overlaps with the gate with the gateinsulating layer positioned therebetween. The low-resistance regionincludes a first portion in contact with the pixel electrode of theliquid crystal element and a second portion in contact with a sidesurface of the opening portion in the insulating layer. The firstportion is positioned in the transmissive region or the reflectiveregion.

The reflective region includes a layer that reflects visible light. Thelayer that reflects visible light includes a portion positioned betweenthe scan line or the signal line and the liquid crystal layer.

In the display device of one embodiment of the present invention, acontact area where the pixel electrode of the liquid crystal element andthe transistor are in contact with each other is positioned in thetransmissive region or the reflective region. In the display device ofone embodiment of the present invention, at least one of the scan lineand the signal line is positioned in the reflective region.

That is, in one embodiment of the present invention, the contact areaand at least one of the scan line and the signal line can be provided ina portion of the display device that contributes to display (the portionis also referred to as an opening portion of a pixel). Thus, theaperture ratio of the display device (also referred to as an apertureratio of a pixel) can be increased. Furthermore, the display device canhave high resolution. This can increase the aperture ratio of atransmissive liquid crystal display device; this aperture ratio can alsobe referred to as the aperture ratio of the pixel. Furthermore, this canenable a display device with high resolution. In addition, the increasein aperture ratio can enable an increase in the light extractionefficiency. This can decrease the power consumption of the displaydevice.

In the case where a material that blocks visible light is used for thesemiconductor layer, the contact area where the pixel electrode and thetransistor are in contact with each other is included in the reflectiveregion. In the case where a material that transmits visible light isused for the semiconductor layer, the contact area where the pixelelectrode and the transistor are in contact with each other ispreferably included in the transmissive region.

The display device of one embodiment of the present invention can bereferred to as a semi-transmissive liquid crystal device. For example,the display device of one embodiment of the present invention canperform display using only external light (also referred to as displayusing only the reflective region, or a reflective mode), display usingonly a backlight (also referred to as display using only thetransmissive region, or a transmissive mode), and display using bothexternal light and a backlight (also referred to as display using boththe reflective region and the transmissive region, or asemi-transmissive mode).

In the case where external light enters the liquid crystal element,display can be performed in the reflective region. At this time, thebacklight can be in an off state. In the case where the area around thedisplay device is sufficiently bright or external light enters thedisplay device sufficiently, for example, it is preferable to performdisplay using only external light (display using only the reflectiveregion). Because it is not necessary to use the backlight, display withhigh visibility can be performed with low power consumption.

In the case where light enters the liquid crystal element from thebacklight, display can be performed in the transmissive region. In thecase where the area around the display device is dark or external lighthardly enters the display device, for example, it is preferable toperform display using the backlight (display using the transmissiveregion).

In the case where light emitted from the backlight and external lightboth enter the liquid crystal element, display can be performed usingboth the transmissive region and the reflective region. In this case,the aperture ratio can be increased as compared with the case wheredisplay is performed using only the transmissive region, so that abright image can be displayed. Furthermore, because reflected light isused, visibility in a bright place is significantly improved as comparedwith the case of using only transmitted light. Moreover, the intensityof light from the backlight can be lowered as compared with the casewhere display is performed using only the transmissive region, so thatdisplay with high visibility can be performed with low powerconsumption.

Examples of the backlight include a direct-below backlight and anedge-light backlight. The use of the direct-below backlight withlight-emitting diodes (LEDs) is preferable as it enables complex localdimming and increase in contrast. The edge-light type backlight ispreferably used because the thickness of a module including thebacklight can be reduced.

As the light source, a cold cathode fluorescent lamp or a light-emittingelement such as an organic light-emitting diode (OLED) or a quantum-dotlight-emitting diode (QLED) may be used as well as an LED.

The display device of one embodiment of the present invention canperform display with high visibility irrespective of the surroundingbrightness or the amount of external light entering the display device.

The brightness of the backlight can be adjusted automatically and/ormanually. In the case where a device including the display deviceincludes an illuminance sensor, the brightness of the backlight can bechanged in accordance with the illuminance obtained by the illuminancesensor. The brightness of the backlight may be adjusted as appropriateby a user of the device.

In one embodiment of the present invention, one pixel electrode isprovided in the reflective region and the transmissive region. Thus, thegradation of transmitted light and reflected light can be controlled byone pixel circuit. Therefore, the number of signal lines and scan linesis not increased and the pixel circuit does not have a complex structureunlike the case of using a method of separately controlling transmittedlight and reflected light, so that a circuit configuration similar tothat of a transmissive display device or a reflective display device canbe used. Consequently, a display device with extremely high resolutioncan be obtained. Furthermore, a transmissive mode, a reflective mode,and a semi-transmissive mode can each be driven without changing adriving method of the pixel circuit.

In the fabrication method of the display device in one embodiment of thepresent invention, the transistor is formed after an electrode of theliquid crystal element is formed over a first substrate. Next, the firstsubstrate and a second substrate are bonded to each other. Then, theelectrode of the liquid crystal element and the transistor aretransferred from the first substrate to the second substrate byseparating the first substrate and the second substrate. By forming theelectrode of the liquid crystal element before the transistor, theelectrode of the liquid crystal element can be formed flatly withoutbeing affected by the uneven surface caused by the transistor or thecontact area of the pixel electrode and the transistor. Forming theelectrode of the liquid crystal element flatly can reduce the variationof cell gaps in the liquid crystal element. In addition, variation ofthe initial alignment of the liquid crystal can be reduced, therebyreducing the display defects in the display device. Furthermore,reduction of the aperture ratio due to the alignment defect of theliquid crystal can be reduced.

In the fabrication method of the display device in one embodiment of thepresent invention, the first substrate used in forming the transistor isseparated during the fabrication process. That is, the fabricationconditions of the transistor are not limited by the material of thesubstrate that is included in the component of the display device. Forexample, by fabricating the transistor over the first substrate using ahigh temperature, the transistor can be made more reliable. By using asubstrate that is thinner and more lightweight and flexible than thefirst substrate as each of the second substrate to which the transistorand the like are transferred, and the counter substrate thatencapsulates the liquid crystal layer together with the secondsubstrate, the display device can be made lightweight, thin, andflexible.

1-1. Structure Example 1 of Display Device

FIG. 1A and FIG. 2A illustrate an example of the display device. FIG. 1Ais a cross-sectional view of a display device 105, and FIG. 2A is aperspective view of the display device 105. For clarity, components suchas a polarizer 130 are not drawn in FIG. 2A. FIG. 2A illustrates thesubstrate 61 with the dotted line.

The display device 105 includes a display portion 62 and a drivercircuit portion 64. An FPC 72 and an IC 73 are implemented on thedisplay device 105.

The display portion 62 includes a plurality of pixels and has a functionof displaying images.

A pixel includes a plurality of sub-pixels. For example, the displayportion 62 can display a full-color image by having one pixel becomposed of three subpixels: a subpixel exhibiting a red color, asubpixel exhibiting a green color, and a subpixel exhibiting a bluecolor. Note that the color exhibited by the subpixel is not limited tored, green, or blue. A pixel may be composed of subpixels that exhibitcolors of white, yellow, magenta, or cyan, for example. In thisspecification and the like, a subpixel may be simply described as apixel.

The display device 105 may have one or both of the scan line drivercircuit and the signal line driver circuit. The display device 105 mayinclude none of the scan line driver circuit and the signal line drivercircuit. When the display device 105 includes a sensor such as a touchsensor, the display device may include a sensor driver circuit. In thisembodiment, the driver circuit portion 64 is exemplified as includingthe scan line driver circuit. The scan line driver circuit has afunction of outputting scan signals to the scan lines included in thedisplay portion 62.

In the display device 105, the IC 73 is mounted on a substrate 51 by aCOG method or the like. The IC 73 includes, for example, any one or moreof a signal line driver circuit, a scan line driver circuit, and asensor driver circuit.

The FPC 72 is electrically connected to the display device 105. The IC73 and the driver circuit portion 64 are supplied with signals or powerfrom the outside through the FPC 72. Furthermore, signals can be outputto the outside from the IC 73 through the FPC 72.

An IC may be mounted on the FPC 72. For example, an IC including any oneor more of a signal line driver circuit, a scan line driver circuit, anda sensor driver circuit may be mounted on the FPC 72.

A wiring 65 supplies signals and power to the display portion 62 and thedriver circuit portion 64. The signals and power are input to the wiring65 from the outside through the FPC 72, or from the IC 73.

FIG. 1A is a cross-sectional view including the display portion 62, thedriver circuit portion 64, and the wiring 65. The display portion 62includes a transmissive region 91 and a reflective region 92. In thetransmissive region 91, display can be performed using light 45 emittedfrom a backlight. In the reflective region 92, display can be performedusing external light 46. The display portion 62 includes a non-displayregion 93 between adjacent subpixels.

The display device 105 is an example of a liquid crystal display devicethat includes a liquid crystal element with a horizontal electric fieldmode.

As illustrated in FIG. 1A, the display device 105 includes the substrate51, an adhesion layer 142, a transistor 201, a transistor 206, a liquidcrystal element 40, a reflective layer 116, an alignment film 133 a, analignment film 133 b, a connection portion 204, an adhesion layer 141, aspacer 117, a coloring layer 131, an overcoat 121, the substrate 61, thepolarizer 130, and the like.

The display portion 62 includes the transistor 206 and the liquidcrystal element 40.

The transistor 206 includes a gate 221, a gate insulating layer 213, anda semiconductor layer (a channel region 231 a and a pair oflow-resistance regions 231 b). The resistivity of the low-resistanceregion 231 b is lower than that of the channel region 231 a. Thesemiconductor layer can transmit visible light. In this embodiment, thecase in which an oxide semiconductor layer is used as the semiconductorlayer is described as an example unless otherwise specified. Forexample, the oxide semiconductor layer preferably contains indium and isfurther preferably an In-M-Zn oxide (M is Al, Ti, Ga, Ge, Y, Zr, La, Ce,Nd, Sn, or Hf) film. The details of the oxide semiconductor layer aredescribed later.

A conductive layer 222 is connected with the low-resistance region 231 bthrough an opening formed in insulating layers 214 and 215.

The transistor 206 is covered by the insulating layers 214 and 215. Notethat the insulating layers 214 and 215 can be considered as thecomponent of the transistor 206. The transistor is preferably covered byan insulating layer that reduces the diffusion of an impurity to thesemiconductor constituting the transistor.

The gate insulating layer 213 preferably includes an excess oxygenregion. When the gate insulating layer 213 includes the excess oxygenregion, excess oxygen can be supplied into the channel region 231 a. Ahighly reliable transistor can be provided since oxygen vacancies thatare potentially formed in the channel region 231 a can be filled withexcess oxygen.

The insulating layer 214 preferably includes nitrogen or hydrogen. Whenthe insulating layer 214 and the low-resistance region 231 b are incontact with each other, nitrogen or hydrogen in the insulating layer214 is added into the low-resistance region 231 b. The carrier densityof the low-resistance region 231 b becomes high when nitrogen orhydrogen is added.

The liquid crystal element 40 is a liquid crystal element with fringefield switching (FFS) mode. The liquid crystal element 40 includes apixel electrode 111, a common electrode 112, and a liquid crystal layer113. The alignment of the liquid crystal layer 113 can be controlledwith the electrical field generated between the pixel electrode 111 andthe common electrode 112. The liquid crystal layer 113 is positionedbetween the alignment films 133 a and 133 b.

The pixel electrode 111 is electrically connected to the low-resistanceregion 231 b of the semiconductor layer of the transistor 206.

In a connection portion 207, the low-resistance region 231 b of thesemiconductor layer is connected to the pixel electrode 111. Thelow-resistance region 231 b of the semiconductor layer includes aportion that is in contact with side surfaces of an opening portion inan insulating layer 211. The low-resistance region 231 b of thesemiconductor layer is in contact with the side surfaces of the openingportion in the insulating layer 211, while at the same time beingconnected to the pixel electrode 111. This enables the pixel electrode111 to be placed flatly.

By using a material that transmits visible light in the semiconductorlayer and the pixel electrode 111, the connection portion 207 can beprovided in the transmissive region 91. Thus, the area of transmissiveregion 91 can be increased.

The connection portion 207 is flat on the substrate 61 side. Thus, thesurface of each of the pixel electrode 111, an insulating layer 220, thecommon electrode 112, and the alignment film 133 a on the substrate 61side are all flat. Note that the surfaces of the pixel electrode 111,the insulating layer 220, the common electrode 112 and the alignmentfilm 133 a that are described above each overlap with the connectionportion 207 and are positioned closer to the substrate 61 than theconnection portion 207. Therefore, portions of the liquid crystal layer113 that overlap with the connection portion 207 can be used to displayimages, similarly to other areas. This can increase the aperture ratioof a display device and facilitate the fabrication of a display devicewith high resolution.

When the low-resistance region 231 b of the semiconductor layer isdirectly connected to the pixel electrode 111, the possibilities in thelayout of the pixel can be increased. For example, the low-resistanceregion 231 b and the pixel electrode 111 may be electrically connectedthrough a conductive layer that is provided closer to the substrate 51than the insulating layer 214. In this case, however, two connectionportions, i.e., a connection portion connecting the conductive layer andthe low-resistance region 231 b, and a connection portion connecting theconductive layer and the pixel electrode 111, need to be provided. Incontrast, the structure illustrated in FIG. 1A and the like can reducesuch connection portions. Therefore, this structure can achieve asmaller pixel size without changing design rules, which enables adisplay device with high resolution.

The reflective layer 116 is provided to overlap with the conductivelayer 222 and the gate 221 of the transistor 206. The reflective layer116 is provided in contact with the pixel electrode 111.

The reflective layer 116 may overlap with one of or both the pixelelectrode 111 and the common electrode 112, or the reflective layer 116does not need to overlap with the pixel electrode 111 or the commonelectrode 112. The reflective layer 116 may be electrically connected tothe pixel electrode 111.

The gate 221 and the conductive layer 222 each preferably have a lowresistance value, and a metal, an alloy, or the like can be suitablyused. The same applies to wirings (including a signal line and a scanline) electrically connected to the gate 221 and the conductive layer222. On the other hand, the gate 221, the conductive layer 222, and thewirings that are formed using such a material block visible light. Thus,a region that blocks visible light is provided in at least a part of thedisplay portion 62.

Thus, in one embodiment of the present invention, the reflective layer116 is provided to overlap with the region that blocks visible light inthe display portion 62. When such a structure is employed, the regionthat blocks visible light in the display portion 62 can be used as thereflective region 92. Furthermore, a portion of the display device thatcontributes to display can be enlarged, and accordingly, the displaydevice can have a high aperture ratio. Moreover, the display device canhave high resolution.

For the reflective layer 116, a material that reflects visible light canbe used. Examples of the material that reflects visible light includealuminum, silver, and an alloy including any of these metal materials.Furthermore, a metal material such as gold, platinum, nickel, tungsten,chromium, molybdenum, iron, cobalt, copper, or palladium or an alloycontaining any of these metal materials can be used. Furthermore,lanthanum, neodymium, germanium, or the like may be added to the metalmaterial or the alloy. Furthermore, an alloy containing aluminum (analuminum alloy) such as an alloy of aluminum and titanium, an alloy ofaluminum and nickel, an alloy of aluminum and neodymium, or an alloy ofaluminum, nickel, and lanthanum (Al—Ni—La); or an alloy containingsilver such as an alloy of silver and copper, an alloy of silver,palladium, and copper (also referred to as Ag—Pd—Cu or APC), or an alloyof silver and magnesium may be used.

In the display device 105, the thicknesses of the insulating layers 211,214, and 215 do not directly affect the characteristics of thetransistors 201 and 206. Thus, the insulating layers 211, 214, and 215can be made thick. This can reduce the parasitic capacitance between thepixel electrode 111 or the reflective layer 116 and the gate 221, theparasitic capacitance between the pixel electrode 111 or the reflectivelayer 116 and the semiconductor layer, the parasitic capacitance betweenthe pixel electrode 111 or the reflective layer 116 and the conductivelayer 222, or the like.

FIGS. 2B and 2C are top views showing layout examples of thetransmissive regions 91, the reflective regions 92, and the non-displayregion 93 in the display portion 62. The transmissive region 91 and thereflective region 92 are provided in a region occupied by one subpixel.That is, the transmissive regions 91 and the reflective regions 92 arearranged in matrix. In FIG. 2B, the reflective region 92 is providedalong two sides of the transmissive region 91. In FIG. 2C, thereflective region 92 is provided to surround the transmissive region 91.Two or more reflective regions 92 may be provided for one transmissiveregion 91. Two transmissive regions 91 that are driven by differenttransistors (two transmissive regions 91 included in differencesubpixels) are separated from each other by the non-display region 93.The top views of the layout of the transmissive regions 91 and thereflective regions 92 are not limited to those shown in FIGS. 2B and 2C.

In the display device of one embodiment of the present invention, a partof the region that blocks visible light in a pixel (subpixel) can beused as the reflective region 92, so that the non-display region 93between adjacent subpixels can be extremely narrowed. For example, thedistance between the pixel electrodes 111 or the width of thenon-display region 93 can be equal to the minimum feature size. Thewidth of the non-display region 93 can be narrowed as much as possiblein accordance with the degree of an alignment margin. For example, thewidth of the non-display region 93 can be determined in accordance withthe degree of the alignment margin of the reflective layer 116 and thepixel electrode 111. The width of the non-display region 93 may besmaller than the minimum feature size.

By narrowing the non-display region 93, a large number of pixels(subpixels) can be provided in the display portion 62. Furthermore, theaperture ratio of the pixel can be increased. Moreover, the degree offreedom in pixel layout can be increased.

The reflective region can be obtained by providing a layer that reflectsvisible light between the liquid crystal layer and a layer that blocksvisible light in a subpixel. For example, the reflective region 92 canbe provided to overlap with one or more of the gate, the semiconductorlayer, a source electrode, and a drain electrode of the transistor.Furthermore, the reflective region 92 can be provided to overlap withone or more of a wiring and an electrode in a pixel and a wiring (e.g.,a signal line, a scan line, and a power supply line) connected to thepixel. In the case where an electrical element such as a capacitor isincluded in the pixel, the reflective region 92 can be provided tooverlap with an electrode of the electrical element.

The common electrode 112 illustrated in FIG. 1A has a top-surface shape(also referred to as a planar shape) that has a comb-like shape, or thatis provided with a slit. The insulating layer 220 is provided betweenthe pixel electrode 111 and the common electrode 112. The pixelelectrode 111 includes a portion that overlaps the common electrode 112with the insulating layer 220 provided therebetween. Furthermore, thecommon electrode 112 is not placed above the pixel electrode 111 in someareas of a region where the pixel electrode 111 and the coloring layer131 overlap.

The pixel electrode and the common electrode included in the liquidcrystal element 40 do not necessarily have a flat-plate like shape andmay have a variety of opening patterns (also referred to as a slit) or acomb-like shape including a bending portion or a branching portion.

An alignment film is preferably provided in contact with the liquidcrystal layer 113. The alignment film can control the alignment of theliquid crystal layer 113. In the display device 105, the alignment film133 a is positioned between the common electrode 112 (or the insulatinglayer 220) and the liquid crystal layer 113, and the alignment film 133b is positioned between the overcoat 121 and the liquid crystal layer113.

The pixel electrode 111 is embedded into the insulating layer 211. Thesurface of the pixel electrode 111 on the liquid crystal layer 113 sidecan form the same surface (or the same plane) with the surface of theinsulating layer 211 on the liquid crystal layer 113 side. That is, thesurface of the pixel electrode 111 on the liquid crystal layer 113 sideand the surface of the insulating layer 211 on the liquid crystal layer113 side are positioned on the same plane, are in contact with the sameplane, have no step differences in their boundaries, or have the sameheight, for example.

A cross-sectional view of the liquid crystal layer 113 and itssurroundings in the display portion 62 is shown in FIG. 1B. Asillustrated in FIG. 1B, the common electrode 112 is embedded into theinsulating layer 220. The surface of the common electrode 112 on theliquid crystal layer 113 side can form the same surface (or the sameplane) with the surface of the insulating layer 220 on the liquidcrystal layer 113 side. That is, the surface of the common electrode 112on the liquid crystal layer 113 side and the surface of the insulatinglayer 220 on the liquid crystal layer 113 side are positioned on thesame plane, are in contact with the same plane, have no substantial stepdifferences in their boundaries, or have the same height, for example.Furthermore, the alignment film 133 a is provided flatly.

In FIG. 1C, the common electrode 112 is provided above the surface ofthe insulating layer 220 on the liquid crystal layer 113 side. Thealignment film 133 a has an uneven surface (see the frames in thedashed-dotted lines) that reflects the thickness of the common electrode112. This can lead to variation in the thickness (also referred to as acell gap) of the liquid crystal layer 113 in the display portion 62,which inhibits favorable display of images.

Furthermore, near the edge of the common electrode 112, the initialalignment of the liquid crystal layer 113 is more prone to variation dueto the uneven surface of the alignment film 133 a in some cases. Thecontrast of the display device degrades in some cases, when regions ofthe liquid crystal layer 113 that are more prone to initial alignmentvariation are used for the display of images. Furthermore, in the casewhere the region more prone to initial alignment variation exist betweentwo adjacent subpixels, the degradation in contrast can be reduced bycovering the region with a light-blocking layer and the like. However,this can reduce the aperture ratio.

As illustrated in FIGS. 1A and 1B, when the surface of the commonelectrode 112 on the liquid crystal layer 113 side and the surface ofthe insulating layer 220 on the liquid crystal layer 113 side form thesame surface, the spacing between the alignment films 133 a and 133 bcan be made uniform within the display portion 62. That is, thethickness of the common electrode 112 does not affect the thickness ofthe liquid crystal layer 113. The thickness of the liquid crystal layer113 becomes constant within the display portion 62. From the above, thedisplay device 105 can display high-quality images with high colorreproducibility.

Furthermore, by providing the alignment film 133 a flatly, the initialalignment can be made uniform more easily, even near the edge of thecommon electrode 112. Providing the alignment film 133 a flatly canreduce the generation of the region prone to the initial alignmentvariation of the liquid crystal layer 113 between two adjacentsubpixels. Thus, the aperture ratio of the display device can beincreased, and the display device can easily achieve a high resolution.

As described above, the display device according to one embodiment ofthe present invention can reduce the step difference generated near theedge of the common electrode 112, leading to less alignment defects dueto the step difference.

A conductive material that transmits visible light is used for both thepixel electrode 111 and the common electrode 112.

For example, a material containing one or more of indium (In), zinc(Zn), and tin (Sn) is preferably used for the conductive material thattransmits visible light. Specifically, indium oxide, indium tin oxide(ITO), indium zinc oxide, indium oxide containing tungsten oxide, indiumzinc oxide containing tungsten oxide, indium oxide containing titaniumoxide, indium tin oxide containing titanium oxide, indium tin oxidecontaining silicon oxide (ITSO), zinc oxide, and zinc oxide containinggallium are given, for example. Note that a film including graphene canbe used as well. The film including graphene can be formed, for example,by reducing a film containing graphene oxide.

Preferably, at least one of the pixel electrode 111 or the commonelectrode 112 includes an oxide conductive layer. The oxide conductivelayer preferably includes one or more metal elements that are includedin the semiconductor layer of the transistor 206. For example, the pixelelectrode 111 preferably contains indium and is further preferably theIn-M-Zn oxide (M is Al, Ti, Ge, Ga, Y, Zr, La, Ce, Sn, Mg, Nd, or Hf)film. Similarly, the common electrode 112 preferably contains indium andis further preferably the In-M-Zn oxide film.

At least one of the pixel electrode 111 and the common electrode 112 maybe formed with an oxide semiconductor. When two or more layersconstituting the display device are formed using oxide semiconductorscontaining the same metal element, the same manufacturing equipment(e.g., film-formation equipment or processing equipment) can be used intwo or more steps; manufacturing cost can thus be reduced.

Oxides are preferably used in both the pixel electrode 111 and thesemiconductor layer. For example, when a non-oxide material (e.g., ametal) is used for one of the components above and an oxide is used forthe other component, a contact resistance between the pixel electrode111 and the semiconductor layer may increase due to the oxidation of thenon-oxide material. By using an oxide for both the pixel electrode 111and the semiconductor layer, the contact resistance is reduced, and thedisplay device 105 can be made more reliable.

When the pixel electrode 111 and the semiconductor layer include anoxide semiconductor with a common metal element, the adhesion betweenthe pixel electrode 111 and the low-resistance region 231 b of thesemiconductor layer can be reinforced in some cases.

An oxide semiconductor is a semiconductor material whose resistance canbe controlled by oxygen vacancies in the film of the semiconductormaterial and/or the concentration of impurities such as hydrogen orwater in the film of the semiconductor material. Thus, the resistivityof the oxide conductive layer can be controlled by selecting betweentreatment for increasing oxygen vacancies and/or impurity concentrationon the oxide semiconductor layer, or treatment for reducing oxygenvacancies and/or impurity concentration on the oxide semiconductorlayer.

Note that such an oxide conductive layer formed using an oxidesemiconductor layer can be referred to as an oxide semiconductor layerhaving a high carrier density and a low resistance, an oxidesemiconductor layer having conductivity, or an oxide semiconductor layerhaving high conductivity.

In addition, the manufacturing cost can be reduced by forming the oxidesemiconductor layer and the oxide conductive layer using the same metalelement. For example, the manufacturing cost can be reduced by using ametal oxide target with the same metal composition. By using the metaloxide target with the same metal composition, an etching gas or anetchant used in the processing of the oxide semiconductor layer can alsobe used for processing of the oxide conductive layer. Note that evenwhen the oxide semiconductor layer and the oxide conductive layer havethe same metal elements, their composition of the metal elements aredifferent in some cases. For example, metal elements in the film candesorb during the fabrication process of the display device, whichresults in a different metal composition.

For example, when a silicon nitride film containing hydrogen is used forthe insulating layer 211, and an oxide semiconductor is used for thepixel electrode 111, the conductivity of the oxide semiconductor can beincreased by the hydrogen that is supplied from the insulating layer211.

For example, when a silicon nitride film containing hydrogen is used forthe insulating layer 220, and an oxide semiconductor is used for thepixel electrode 112, the conductivity of the oxide semiconductor can beincreased by the hydrogen that is supplied from the insulating layer220.

In the display device 105, the coloring layer 131 is provided in aportion closer to the substrate 61 than the liquid crystal layer 113.The coloring layer 131 is positioned at least in a portion overlappingwith the transmissive region 91. In the case where the coloring layer131 is located also in a portion overlapping with the reflective region92, full-color display can be performed using the reflective region 92.In the case where the coloring layer 131 is not provided in thereflective region 92, monochrome display can be performed using thereflective region 92. A light-blocking layer may be provided between thetransmissive region 91 and the reflective region 92 and in thenon-display region 93.

The overcoat 121 is preferably provided between the coloring layer 131and the liquid crystal layer 113. The overcoat 121 can reduce thediffusion of an impurity contained in the coloring layer 131 and thelike into the liquid crystal layer 113.

The spacer 117 has a function of keeping the distance between thesubstrate 51 and the substrate 61 greater than or equal to a certaindistance.

In the example shown in FIG. 1A, the bottom surface of the spacer 117 isin contact with the overcoat 121; however, one embodiment of the presentinvention is not limited thereto. The spacer 117 may be provided on thesubstrate 51 side, or the substrate 61 side.

In the example shown in FIG. 1A, the alignment films 133 a and 133 b arein contact with each other in a region where the alignment films 133 aand 133 b overlap with the spacer 117; however, the alignment films 133a and 133 b are not necessarily in contact with each other. Furthermore,the spacer 117 provided over one substrate may be, but is notnecessarily, in contact with a structure provided over the other. Forexample, the liquid crystal layer 113 may be positioned between thespacer 117 and the structure.

A particulate spacer may be used as the spacer 117. As the particulatespacer, materials such as silica can be used. The spacer is preferablymade of a material with elasticity, such as a resin or rubber. In thiscase, the particulate spacer may take a shape that is verticallycrushed.

The substrates 51 and 61 are bonded to each other by the adhesion layer141. The liquid crystal layer 113 is encapsulated in a region that issurrounded by the substrates 51 and 61, and the adhesion layer 141.

In the display device 105, two polarizers are positioned in a way thatthe display portion 62 is sandwiched by the two polarizers. FIG. 1Aillustrates the polarizer 130 on the substrate 61 side. The light 45emitted from the backlight provided in a position closer to the outsidethan the polarizing plate on the substrate 51 side enters thetransmissive region 91 through the polarizing plate. The external light46 incident from the substrate 61 side enters the reflective region 92through the polarizer 130 and is reflected by the reflective layer 116.In this case, the optical modulation of the light can be controlled bycontrolling the alignment of the liquid crystal layer 113 with a voltagesupplied between the pixel electrode 111 and the common electrode 112.That is, the intensity of light that is ejected through the polarizer130 can be controlled. Furthermore, the coloring layer 131 absorbs lightof wavelengths other than a specific wavelength range from the incidentlight. As a result, the ejected light is light that exhibits red, blue,or green colors, for example.

Furthermore, in addition to a polarizer, an circular polarizer can beused, for example. An example of a circular polarizer includes apolarizer which is formed by stacking a linear polarizer and aquarter-wave retardation film. The circular polarizer can reduce theviewing angle dependence of the display quality of the display device.

Note that the liquid crystal element 40 is an element using an FFS modehere; however, one embodiment of the present invention is not limitedthereto, and a liquid crystal element using any of a variety of modescan be used. For example, a liquid crystal element using a verticalalignment (VA) mode, a twisted nematic (TN) mode, an in-plane switching(IPS) mode, an axially symmetric aligned micro-cell (ASM) mode, anoptically compensated birefringence (OCB) mode, a ferroelectric liquidcrystal (FLC) mode, an antiferroelectric liquid crystal (AFLC) mode, orthe like can be used.

Furthermore, the display device 105 may be a normally black liquidcrystal display device, for example, a liquid crystal display deviceusing a vertical alignment (VA) mode. Examples of the vertical alignmentmode include a multi-domain vertical alignment (MVA) mode, a patternedvertical alignment (PVA) mode, and an advanced super view (ASV) mode.

The liquid crystal element is an element that controls transmission andnon-transmission of light by optical modulation action of the liquidcrystal. The optical modulation action of a liquid crystal is controlledby an electric field applied to the liquid crystal (including ahorizontal electric field, a vertical electric field, and an obliqueelectric field). As the liquid crystal used for the liquid crystalelement, a thermotropic liquid crystal, a low-molecular liquid crystal,a high-molecular liquid crystal, a polymer dispersed liquid crystal(PDLC), a ferroelectric liquid crystal, an anti-ferroelectric liquidcrystal, or the like can be used. Such a liquid crystal materialexhibits a cholesteric phase, a smectic phase, a cubic phase, a chiralnematic phase, an isotropic phase, or the like depending on conditions.

As the liquid crystal material, a positive liquid crystal or a negativeliquid crystal may be used, and an appropriate liquid crystal materialcan be used depending on the mode and design to be used.

Alternatively, in the case of employing a horizontal electric fieldmode, a liquid crystal exhibiting a blue phase for which an alignmentfilm is unnecessary may be used. A blue phase is one of liquid crystalphases, which is generated just before a cholesteric phase changes intoan isotropic phase while temperature of cholesteric liquid crystal isincreased. Since the blue phase appears only in a narrow temperaturerange, a liquid crystal composition in which 5 wt. % or more of a chiralmaterial is mixed is preferably used for the liquid crystal layer 113 inorder to improve the temperature range. The liquid crystal compositionwhich includes a liquid crystal exhibiting a blue phase and a chiralmaterial has a short response time and exhibits optical isotropy, whichmakes the alignment process unnecessary. In addition, the liquid crystalcomposition which includes liquid crystal exhibiting a blue phase and achiral material has little viewing angle dependence. In addition, sincean alignment film does not need to be provided and rubbing treatment isunnecessary, electrostatic discharge damage caused by the rubbingtreatment can be prevented and defects or damage of the display devicein the manufacturing process can be reduced.

The driver circuit portion 64 includes the transistor 201.

The transistor 201 includes the gate 221, the gate insulating layer 213,the semiconductor layer (the channel region 231 a and the pair oflow-resistance regions 231 b), a conductive layer 222 a, and aconductive layer 222 b. One of the conductive layers 222 a and 222 bfunctions as a source, and the other functions as a drain. Theconductive layers 222 a and 222 b are electrically connected to thelow-resistance regions 231 b.

In the connection portion 204, the wiring 65 and a conductive layer 255are connected to each other, the conductive layer 255 and a conductivelayer 253 are connected to each other, and the conductive layer 253 anda conductive layer 251 are connected to each other. The conductive layer251 and a connector 242 are connected to each other. That is, theconnection portion 204 is electrically connected to the FPC 72 throughthe connector 242. By employing this configuration, signals and powercan be supplied from the FPC 72 to the wiring 65.

The wiring 65 can be formed with the same material and the samefabrication step as those used in the conductive layer 222 that isincluded in the transistor 206. The conductive layer 255 can be formedwith the same material and the same fabrication step as those used inthe low-resistance region 231 b that is included in the semiconductorlayer. The conductive layer 253 can be formed with the same material andthe same fabrication step as those used in the pixel electrode 111 thatis included in the liquid crystal element 40. The conductive layer 251can be formed with the same material and the same fabrication step asthose used in the common electrode 112 that is included in the liquidcrystal element 40. Fabricating the conductive layers constituting theconnection portion 204 in such a manner, i.e., using the same materialsand the same fabrication processes as those used in the conductivelayers composing the display portion 62 and the driver circuit portion64, is preferable because this can reduce the number of process steps.

The transistors 201 and 206 may or may not have the same structure. Thatis, the transistors included in the driver circuit portion 64 and thetransistors included in the display portion 62 may or may not have thesame structure. In addition, the driver circuit portion 64 may have aplurality of transistors with different structures, and the displayportion 62 may have a plurality of transistors with differentstructures. For example, a transistor including two gates that areelectrically connected to each other is preferably used for one or moreof a shift register circuit, a buffer circuit, and a protection circuitincluded in a scan line driver circuit.

The pixel arrangement examples are shown in FIGS. 3A and 3B. FIGS. 3Aand 3B show examples in which one pixel is composed of a red subpixel R,a green subpixel G, and a blue subpixel B. In FIGS. 3A and 3B, aplurality of scan lines 81 extend in the x direction, and a plurality ofsignal lines 82 extend in the y direction. The scan lines 81 and thesignal lines 82 intersect with each other.

As shown by the dashed two dotted line in FIG. 3A, a subpixel includesthe transistor 206, a capacitor 34, and the liquid crystal element 40.The gate of the transistor 206 is electrically connected to the scanline 81. One of the source and the drain of the transistor 206 iselectrically connected to the signal line 82, and the other iselectrically connected to one electrode of the capacitor 34 and oneelectrode of the liquid crystal element 40. The other electrode of thecapacitor 34 and the other electrode of the liquid crystal element 40are each supplied with a constant potential.

Examples of a driving method of a liquid crystal display device includethe following: frame inversion driving, where the polarity of thesignals are inverted frame by frame; gate-line inversion driving, wherethe polarity of the signals are inverted row by row; source-lineinversion driving, where the polarity of the signals are inverted columnby column; and dot-line inversion driving, where the polarity of thesignals are inverted column by column and row by row. The burn-in of theimages can be prevented by inverting the polarity of the signals usingthese driving methods.

FIGS. 3A and 3B show examples where the source-line inversion driving isadopted. Signals A1 and A2 are signals with the same polarity. SignalsB1 and B2 are signals with the same polarity. Signals A1 and B1 aresignals with different polarities. Signals A2 and B2 are signals withdifferent polarities.

As the resolution of the display device become higher, the distancebetween the subpixels become shorter. Thus, as shown in the frameoutlined in a dashed-dotted line in FIG. 3A, in the subpixel where thesignal A1 is input, the liquid crystal is prone to the effects caused bypotentials in both the signal A1 and the signal B1, in the vicinities ofthe signal line 82 where the signal B1 is input. This can make theliquid crystal more prone to alignment defects.

In FIG. 3A, the direction in which a plurality of subpixels exhibitingthe same color are aligned is the y direction, and is substantiallyparallel to the direction that the signal lines 82 extend in. As shownin the frame outlined by a dashed-dotted line in FIG. 3A, subpixelsexhibiting different colors are adjacent to each other, with the longersides of the subpixels facing each other.

In FIG. 3B, the direction in which the plurality of subpixels exhibitingthe same color are aligned is the x direction, and intersects with thedirection that the signal lines 82 extend in. As shown in the frameoutlined in a dashed-dotted line in FIG. 3B, subpixels exhibiting thesame color are adjacent to each other, with the shorter sides of thesubpixels facing each other.

When the side of the subpixel that is substantially parallel to thedirection in which the signal lines 82 extend is the shorter sides ofthe subpixel as illustrated in FIG. 3B, the region where the liquidcrystal is more prone to alignment defects can be made narrower,compared with the case (illustrated in FIG. 3A) where the side of thesubpixel that is substantially parallel to the direction in which thesignal lines 82 extend is the longer sides of the subpixel. When theregion where the liquid crystal is more prone to alignment defects ispositioned between subpixels exhibiting the same color as illustrated inFIG. 3B, display defects are less easily recognized by a user of thedisplay device when compared with the case (see FIG. 3A) where theregion is positioned between subpixels exhibiting different colors.

Therefore, in one embodiment of the present invention, the direction inwhich the plurality of subpixels exhibiting the same color are arrangedpreferably intersects with the direction that the signal lines 82 extendin.

FIGS. 4A and 4B show examples in each of which a thickness of thecoloring layer in the transmissive region 91 is different from athickness of the coloring layer in the reflective region 92.

In the reflective region 92, light passes through the coloring layertwice. In contrast, in the transmissive region 91, light passes throughthe coloring layer only once. Therefore, in the case where the coloringlayer has the same thickness in the transmissive region 91 and thereflective region 92, there is a possibility that the color tone ofdisplay varies.

In FIGS. 4A and 4B, the thickness of the coloring layer in thereflective region 92 is smaller than the thickness of the coloring layerin the transmissive region 91. Thus, display with excellent color tonecan be achieved in both of the transmissive region 91 and the reflectiveregion 92. Moreover, color unevenness in the display can be reduced.

The thickness of the coloring layer in the reflective region 92 ispreferably greater than or equal to 40% and less than or equal to 60% ofthe thickness of the coloring layer in the transmissive region 91.

In FIG. 4A, the transmissive region 91 includes a stack of a coloringlayer 131 a and a coloring layer 131 b, and the reflective region 92includes only the coloring layer 131 a. In the case where the coloringlayer is separated into two or more layers in this manner, a thicknessof the coloring layer in the transmissive region 91 can be madedifferent from a thickness of the coloring layer in the reflectiveregion 92.

In FIG. 4B, a thickness of the coloring layer 131 in the transmissiveregion 91 is different from a thickness of the coloring layer 131 in thereflective region 92. With the use of, for example, a multi-tone mask (agray tone mask or a half tone mask), the thickness of the coloring layer131 in the transmissive region 91 can be made different from thethickness of the coloring layer 131 in the reflective region 92.

In the example shown in FIG. 4C, the coloring layer 131 is not providedin the reflective region 92. In the case where only monochrome displayis performed in the reflective region 92, the coloring layer 131 is notnecessarily provided in the reflective region 92.

In the example shown in FIG. 4D, a light-blocking layer 132 is providedbetween adjacent coloring layers 131. The light-blocking layer 132 ispreferably provided between subpixels exhibiting different colors. Thelight-blocking layer 132 may be provided between subpixels exhibitingthe same color. In the display portion 62, a portion where thelight-blocking layer 132 is provided can be called “non-display region93”. The light-blocking layer 132 is provided on the substrate 61 side.

FIGS. 5A to 5C show examples in each of which a gap adjusting film 134is provided in the reflective region 92.

A polarization state of light is changed depending on a travelingdistance of light in the liquid crystal layer 113 because the liquidcrystal layer 113 has refractive index anisotropy. In the reflectiveregion 92, light passes through the liquid crystal layer 113 twice. Incontrast, in the transmissive region 91, light passes through the liquidcrystal layer 113 only once. Therefore, in the case where the liquidcrystal layer 113 has the same thickness in the transmissive region 91and the reflective region 92, there is a possibility that excellentdisplay cannot be performed in one of the regions.

In the case where the gap adjusting film 134 is provided in thereflective region 92, a thickness of the liquid crystal layer 113 in thetransmissive region 91 can be larger than a thickness of the liquidcrystal layer 113 in the reflective region 92, whereby the transmissiveregion 91 and the reflective region 92 can have the same opticaldistance. Thus, excellent display can be performed in both of thetransmissive region 91 and the reflective region 92.

The gap adjusting film 134 can be formed using a material that transmitsvisible light. For example, an organic material such as acrylic orpolyimide can be used for forming the gap adjusting film 134.

The gap adjusting film 134 is preferably provided on the substrate 61side, in which case the gap adjusting film 134 can be formed easily. Theorder of formation of the gap adjusting film 134 relative to thecoloring layer 131, the light-blocking layer 132, and the overcoat 121is not limited in particular.

In FIGS. 5A and 5B, the gap adjusting film 134 is positioned between thesubstrate 61 and the coloring layer 131. In FIG. 5C, the gap adjustingfilm 134 is positioned between the overcoat 121 and the alignment film133 b.

Because of the gap adjusting film 134, a center portion and an endportion of the transmissive region 91 or the reflective region 92 have adifference in the thickness of the liquid crystal layer 113 in somecases. The difference in the thickness of the liquid crystal layer 113may result in a variation in the initial alignment of liquid crystals,so that display failure may occur. In FIG. 5C, the light-blocking layer132 is provided at the boundary between the transmissive region 91 andthe reflective region 92. In this structure, a region different from theother region in the thickness of the liquid crystal layer 113 does notcontribute to display, and thus, display failure can be prevented.

The thickness of the liquid crystal layer 113 in the reflective region92 is preferably greater than or equal to 40% and less than or equal to60% of the thickness of the liquid crystal layer 113 in the transmissiveregion 91.

In the examples shown in FIG. 1A and other drawings, an entire surfaceof the reflective layer 116 overlaps with the pixel electrode 111. Incontrast, the reflective layer 116 may partly overlap with the pixelelectrode 111 as shown in FIGS. 5A and 5B. In the example shown in FIG.5A, the reflective layer 116 is positioned closer to the liquid crystallayer 113 than the pixel electrode 111. In the example shown in FIG. 5B,the pixel electrode 111 is provided in a position closer to the liquidcrystal layer 113 than the reflective layer 116. In FIGS. 5A and 5B, thereflective layer 116 is electrically connected to the pixel electrode111. That is, the reflective layer 116 can serve as a pixel electrode inthe reflective region 92. Thus, a portion without the pixel electrode111 in the reflective region 92 can also be used to perform display.

FIGS. 6A and 6B each show a structure in which the semiconductor layeris formed using a material that blocks visible light.

In the case where the semiconductor layer is formed using a materialthat blocks visible light, a portion overlapping with the semiconductorlayer is preferably used as the reflective region 92.

In FIG. 6A, the low-resistance region of the semiconductor layer isdirectly connected to the pixel electrode 111, and the pixel electrode111 is directly connected to the reflective layer 116. The reflectivelayer 116 is positioned between the semiconductor layer and the liquidcrystal layer 113. The pixel electrode 111 extends to be in thetransmissive region 91.

In FIG. 6B, the low-resistance region of the semiconductor layer isdirectly connected to the reflective layer 116, and the conductive layer106 that transmits visible light is directly connected to the reflectivelayer 116. In FIG. 6B, the reflective layer 116 serves as a pixelelectrode. The conductive layer 106 that transmits visible light iselectrically connected to the reflective layer 116. The conductive layer106 that transmits visible light can also serve as a pixel electrode.

In the case where the semiconductor layer is formed using a materialthat blocks visible light or a material that partly absorbs visiblelight, a contact area where the pixel electrode is in contact with thetransistor is preferably included in the reflective region. By providingthe contact area in a portion that contributes to display, the apertureratio of the display device can be increased. Furthermore, theresolution of the display device can be increased.

Next, the details of the materials that can be used for components ofthe display device of this embodiment and the like are described. Notethat description on the components already described is omitted in somecases. The materials described below can be used as appropriate in thedisplay device, the touch panel, and the components thereof describedlater.

<<Substrates 51 and 61>>

There are no large limitations on the material of the substrate used inthe display device of one embodiment of the present invention; a varietyof substrates can be used. For example, a glass substrate, a quartzsubstrate, a sapphire substrate, a semiconductor substrate, a ceramicsubstrate, a metal substrate, a plastic substrate or the like can beused.

The weight and thickness of the display device can be reduced by using athin substrate. Furthermore, a flexible display device can be obtainedby using a substrate that is thin enough to have flexibility.

The display device of one embodiment of the present invention isfabricated by forming a transistor and the like over the fabricationsubstrate, then transferring the transistor and the like on anothersubstrate. The use of the fabrication substrate enables the following: aformation of a transistor with favorable characteristics; a formation ofa transistor with low power consumption; a manufacturing of a durabledisplay device, an addition of heat resistance to the display device, amanufacturing of a more lightweight display device, or a manufacturingof a thinner display device. Examples of a substrate to which atransistor is transferred include, in addition to the substrate overwhich the transistor can be formed, a paper substrate, a cellophanesubstrate, a wood substrate, a cloth substrate (including a naturalfiber (e.g., silk, cotton, or hemp), a synthetic fiber (e.g., nylon,polyurethane, or polyester), a regenerated fiber (e.g., acetate, cupra,rayon, or regenerated polyester), and the like), a leather substrate, arubber substrate, and the like.

<<Transistors 201 and 206>>

A transistor included in the display device of one embodiment of thepresent invention may have a top-gate structure or a bottom-gatestructure. Gate electrodes may be provided above and below a channel. Asemiconductor material used in the transistor is not particularlylimited, and an oxide semiconductor, silicon, or germanium can be used,for example.

There is no particular limitation on the crystallinity of asemiconductor material used for the transistors, and an amorphoussemiconductor or a semiconductor having crystallinity (amicrocrystalline semiconductor, a polycrystalline semiconductor, asingle-crystal semiconductor, or a semiconductor partly includingcrystal regions) may be used. The use of a semiconductor havingcrystallinity is preferable as the degradation of a transistor'scharacteristics can be reduced.

For example, a Group 14 element, a compound semiconductor, or an oxidesemiconductor can be used for the semiconductor layer. Typically, asemiconductor including silicon, a semiconductor including galliumarsenide or an oxide semiconductor including indium can be used for thesemiconductor layer.

An oxide semiconductor is preferably used for the semiconductor in whichthe channel of a transistor is formed. In particular, using an oxidesemiconductor with a larger bandgap than that of silicon is preferable.The use of a semiconductor material with a larger bandgap than that ofsilicon and a small carrier density is preferable because the currentduring the off state (off-state current) of the transistor can bereduced.

The oxide semiconductor preferably contains at least indium (In) or zinc(Zn), for example. The oxide semiconductor further preferably containsan In-M-Zn oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, La, Ce,Nd, Sn, or Hf).

As the semiconductor layer, it is preferable to use an oxidesemiconductor layer including a plurality of crystal portions in whichthe c-axes of the crystal portions are oriented substantiallyperpendicular to a surface on which the semiconductor layer is formed orthe top surface of the semiconductor layer, and adjacent crystalportions have no grain boundary.

The use of such an oxide semiconductor for the semiconductor layer makesit possible to provide a highly reliable transistor in which a change inthe electrical characteristics is reduced.

Charge accumulated in a capacitor through the transistor can be retainedfor a long time because of low off-state current of the transistor. Theuse of such a transistor in pixels allows a driver circuit to stop whilethe gray level of an image displayed on display regions of the pixels ismaintained. As a result, a display device with extremely low powerconsumption is obtained.

The transistors 201 and 206 preferably include an oxide semiconductorlayer that is highly purified to reduce the formation of oxygenvacancies. Accordingly, the off-state current of the transistor can bemade small. Accordingly, an electrical signal such as an image signalcan be held for a long period, and a writing interval can be set long inan on state. Accordingly, the frequency of refresh operation can bereduced, which leads to an effect of reducing power consumption.

In the transistors 201 and 206, relatively high field-effect mobilitycan be obtained, whereby high-speed operation is possible. The use ofsuch transistors that are capable of high-speed operation in the displaydevice enables the fabrication of the transistor in the display regionand the transistors in the driver circuit portion over the samesubstrate. This means that a semiconductor device separately formed witha silicon wafer or the like does not need to be used as the drivercircuit, which enables a reduction of the number of components in thedisplay device. In addition, using the transistor that can operate athigh speed in the display region also can enable the provision of ahigh-quality image.

<<Oxide Semiconductor Layer>>

The oxide semiconductor layer preferably includes a film represented byan In-M-Zn oxide that contains at least indium (In), zinc (Zn), and M (ametal such as Al, Ti, Ga, Ge, Y, Zr, La, Ce, Nd, Sn, or Hf). In order toreduce variations in electrical characteristics of the transistorincluding the oxide semiconductor, the oxide semiconductor preferablycontains a stabilizer in addition to the In-M-Zn oxide.

Examples of the stabilizer, including metals that can be used as M, aregallium (Ga), tin (Sn), hafnium (Hf), aluminum (Al), zirconium (Zr) andthe like. As another stabilizer, lanthanoid such as lanthanum (La),cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium(Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho),erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium (Lu) can be used.

As an oxide semiconductor included in an oxide semiconductor layer, anyof the followings can be used, for example: an In—Ga-based oxide, anIn—Zn-based oxide, an In—Ga—Zn-based oxide, an In—Al—Zn-based oxide, anIn—Sn—Zn-based oxide, an In—Hf—Zn-based oxide, an In—La—Zn-based oxide,an In—Ce—Zn-based oxide, an In—Pr—Zn-based oxide, an In—Nd—Zn-basedoxide, an In—Sm—Zn-based oxide, an In—Eu—Zn-based oxide, anIn—Gd—Zn-based oxide, an In—Tb—Zn-based oxide, an In—Dy—Zn-based oxide,an In—Ho—Zn-based oxide, an In—Er—Zn-based oxide, an In—Tm—Zn-basedoxide, an In—Yb—Zn-based oxide, an In—Lu—Zn-based oxide, anIn—Sn—Ga—Zn-based oxide, an In—Hf—Ga—Zn-based oxide, anIn—Al—Ga—Zn-based oxide, an In—Sn—Al—Zn-based oxide, anIn—Sn—Hf—Zn-based oxide, and an In—Hf—Al—Zn-based oxide.

Note that here, for example, an “In—Ga—Zn-based oxide” means an oxidecontaining In, Ga, and Zn as its main components and there is nolimitation on the ratio of In:Ga:Zn. Further, a metal element inaddition to In, Ga, and Zn may be contained.

Note that in the case where the oxide semiconductor layer includes anIn-M-Zn oxide, when the summation of In and M is assumed to be 100atomic %, the atomic proportions of In and M are preferably higher than25 atomic % and lower than 75 atomic %, respectively, more preferablyhigher than 34 atomic % and lower than 66 atomic %, respectively.

The energy gap of the oxide semiconductor layer is 2 eV or more,preferably 2.5 eV or more, more preferably 3 eV or more. The use of suchan oxide semiconductor having a wide energy gap leads to a reduction inoff-state current of a transistor.

The thickness of the oxide semiconductor layer is greater than or equalto 3 nm and less than or equal to 200 nm, preferably greater than orequal to 3 nm and less than or equal to 100 nm and further preferablygreater than or equal to 3 nm and less than or equal to 50 nm.

In the case where the oxide semiconductor layer includes an In-M-Znoxide (M is Al, Ti, Ga, Ge, Y, Zr, La, Ce, Nd, Sn, or Hf), it ispreferable that the atomic ratio of metal elements of a sputteringtarget used for forming a film of the In-M-Zn oxide satisfy In≥M andZn≥M. As the atomic ratio of the metal elements of such a sputteringtarget, In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2, In:M:Zn=1:3:4,In:M:Zn=1:3:6, and the like are given. Note that the atomic ratio ofmetal elements in the formed oxide semiconductor layer varies from theabove atomic ratio of metal elements of the sputtering target within arange of ±40% as an error.

An oxide semiconductor film with low carrier density is used as thesemiconductor layer. For example, an oxide semiconductor film whosecarrier density is lower than or equal to 1×10¹⁷/cm³, preferably lowerthan or equal to 1×10¹⁵/cm³, more preferably lower than or equal to1×10¹³/cm³, more preferably lower than or equal to 1×10¹¹/cm³ is used asthe semiconductor layer.

Note that, without limitation to those described above, a material withan appropriate composition can be used depending on requiredsemiconductor characteristics and electrical characteristics (e.g.,field-effect mobility and threshold voltage) of the transistor.

When silicon or carbon that is one of elements belonging to Group 14 iscontained in the oxide semiconductor layer, oxygen vacancies areincreased in the oxide semiconductor layer, and the oxide semiconductorlayer becomes an n-type. Thus, the concentration of silicon or carbon(the concentration is measured by SIMS) in the oxide semiconductor layeris lower than or equal to 2×10¹⁸ atoms/cm³, preferably lower than orequal to 2×10¹⁷ atoms/cm³.

Further, the concentration of alkali metal or alkaline earth metal ofthe oxide semiconductor layer, which is measured by SIMS, is lower thanor equal to 1×10¹⁸ atoms/cm³, preferably lower than or equal to 2×10¹⁶atoms/cm³. Alkali metal and alkaline earth metal can potentiallygenerate carriers when bonded to an oxide semiconductor, in which casethe off-state current of the transistor can potentially be increased.Therefore, it is preferable to reduce the concentration of alkali metalor alkaline earth metal in the semiconductor layer.

When nitrogen is contained in the oxide semiconductor layer, electronsserving as carriers are generated and the carrier density increases, sothat the semiconductor layer easily becomes n-type. Thus, a transistorincluding an oxide semiconductor that contains nitrogen is likely to benormally-on. For this reason, nitrogen in the oxide semiconductor layeris preferably reduced as much as possible; the concentration of nitrogenwhich is measured by SIMS is preferably set to, for example, lower thanor equal to 5×10¹⁸ atoms/cm³.

The oxide semiconductor layer may have a non-single-crystal structure,for example. The non-single crystal structure includes a c-axis alignedcrystalline oxide semiconductor (CAAC-OS), a polycrystalline structure,a microcrystalline structure, or an amorphous structure, for example.Among the non-single crystal structure, the amorphous structure has thehighest density of defect states, whereas CAAC-OS has the lowest densityof defect states.

The oxide semiconductor layer may have an amorphous structure, forexample. An oxide semiconductor layer which has an amorphous structurehas a disordered atomic arrangement and no crystalline component, forexample. Alternatively, the oxide films having an amorphous structurehave, for example, an absolutely amorphous structure and no crystalportion.

Note that the oxide semiconductor layer may be a mixed film includingtwo or more of the following: a region having an amorphous structure, aregion having a microcrystalline structure, a region having apolycrystalline structure, a region of CAAC-OS, and a region having asingle-crystal structure. The mixed film has a single-layer structureincluding, for example, two or more of a region having an amorphousstructure, a region having a microcrystalline structure, a region havinga polycrystalline structure, a CAAC-OS region, and a region having asingle-crystal structure in some cases. Alternatively, the mixed filmmay have a stacked structure of two or more of a region having anamorphous structure, a region having a microcrystalline structure, aregion having a polycrystalline structure, a CAAC-OS region, and aregion having a single-crystal structure.

<<Insulating Layer>>

An organic insulating material or an inorganic insulating material canbe used as an insulating material that can be used for the insulatingfilm, the overcoat, the spacer, or the like included in the displaydevice. Examples of an organic insulating material include an acrylicresin, an epoxy resin, a polyimide resin, a polyamide resin, apolyamide-imide resin, a siloxane resin, a benzocyclobutene-based resin,and a phenol resin. Examples of inorganic insulating films include asilicon oxide film, a silicon oxynitride film, a silicon nitride oxidefilm, a silicon nitride film, an aluminum oxide film, an aluminumnitride film, a hafnium oxide film, an yttrium oxide film, a zirconiumoxide film, a gallium oxide film, a tantalum oxide film, a magnesiumoxide film, a lanthanum oxide film, a cerium oxide film, and a neodymiumoxide film.

<<Conductive Layer>>

For the conductive layer such as the gate, the source, and the drain ofa transistor and the wiring, and the electrode of the display device, asingle-layer structure or a stacked structure using any of metals suchas aluminum, titanium, chromium, nickel, copper, yttrium, zirconium,molybdenum, silver, tantalum, and tungsten, or an alloy containing anyof these metals as its main component can be used. For example, atwo-layer structure in which a titanium film is stacked over an aluminumfilm; a two-layer structure in which a titanium film is stacked over atungsten film; a two-layer structure in which a copper film is stackedover a molybdenum film; a two-layer structure in which a copper film isstacked over an alloy film containing molybdenum and tungsten; atwo-layer structure in which a copper film is stacked over an alloy filmcontaining copper, magnesium, and aluminum; a three-layer structure inwhich titanium film or a titanium nitride film, an aluminum film or acopper film, and a titanium film or a titanium nitride film are stackedin this order; a three-layer structure in which a molybdenum film or amolybdenum nitride film, an aluminum film or a copper film, and amolybdenum film or a molybdenum nitride film are stacked in this order;or the like can be employed. For example, in the case where a sourceelectrode 225 a and a drain electrode 225 b have a three-layerstructure, it is preferable that each of the first and third layers be afilm formed of titanium, titanium nitride, molybdenum, tungsten, analloy containing molybdenum and tungsten, an alloy containing molybdenumand zirconium, or molybdenum nitride, and that the second layer be afilm formed of a low-resistance material such as copper, aluminum, gold,silver, or an alloy containing copper and manganese. Note thatlight-transmitting conductive materials such as ITO, indium oxidecontaining tungsten oxide, indium zinc oxide containing tungsten oxide,indium oxide containing titanium oxide, indium tin oxide containingtitanium oxide, indium zinc oxide, or ITSO may be used.

An oxide conductive layer can be formed by controlling the resistivityof the oxide semiconductor.

<<Adhesion Layer 141>>

A curable resin such as a heat-curable resin, a photocurable resin, or atwo-component type curable resin can be used for the adhesion layer 141.For example, an acrylic resin, a urethane resin, an epoxy resin, or asiloxane resin or the like can be used.

<<Connector 242>>

As the connector 242, for example, an anisotropic conductive film (ACF),an anisotropic conductive paste (ACP), and the like can be used.

<<Coloring Layer 131>>

The coloring layer 131 is a colored layer that transmits light in aspecific wavelength range. Examples of materials that can be used forthe coloring layer 131 include a metal material, a resin material, and aresin material containing a pigment or dye.

<<Light-Blocking Layer 132>>

The light-blocking layer 132 is provided between adjacent coloringlayers 131. A black matrix formed with, for example, a metal material ora resin material containing a pigment or dye can be used as thelight-blocking layer 132. Note that it is preferable to provide thelight-blocking layer 132 also in a region other than the display portion62, such as the driver circuit portion 64, in which case undesiredleakage of guided light or the like can be inhibited (see FIG. 7 and thelike).

1-2. Structure Example 2 of Display Device

FIG. 7 to FIG. 14 show examples of a display device. FIG. 7 is across-sectional view of a display device 105A. FIGS. 8A to 8D are topviews of a subpixel included in a display device 105B. FIG. 9 is across-sectional view of the display device 105B. FIGS. 10A to 10C, FIGS.11A to 11C, and FIGS. 12A to 12C show modification examples of the topviews of the subpixel. FIG. 13A is a cross-sectional view of a displaydevice 105C. FIG. 14 is a cross-sectional view of a display device 105D.Note that perspective views of the display device 105A, the displaydevice 105B, the display device 105C, and the display device 105D aresimilar to the perspective view of the display device 105 shown in FIGS.2A to 2C, and therefore, description thereof is omitted here.

The display device 105A illustrated in FIG. 7 is different from thedisplay device 105 described above in the positional relationshipbetween the pixel electrode 111 and the common electrode 112.

The display device 105 illustrated in FIG. 1A or the like has astructure where the alignment film 133 a and the common electrode 112are in contact with each other, while the display device 105Aillustrated in FIG. 7 has a structure where the alignment film 133 a andthe pixel electrode 111 are in contact with each other.

As illustrated in FIG. 7, in the display device 105A, the low-resistanceregion 231 b of the semiconductor layer is in contact with the sidesurfaces of the opening portions in the insulating layers 211 and 220,and connects with the pixel electrode 111. This enables the pixelelectrode 111 to be placed flatly.

In the display device 105A, the common electrode 112 is embedded intothe insulating layer 211. The surface of the common electrode 112 on theliquid crystal layer 113 side can form the same surface with the surfaceof the insulating layer 211 on the liquid crystal layer 113 side.

As shown in FIG. 7, when the surface of the pixel electrode 111 on theliquid crystal layer 113 side and the surface of the insulating layer220 on the liquid crystal layer 113 side form the same surface, thespacing between the alignment films 133 a and 133 b can be made uniformwithin the display portion 62. That is, the thickness of the pixelelectrode 111 does not affect the thickness of the liquid crystal layer113. The thickness of the liquid crystal layer 113 becomes constantwithin the display portion 62. From the above, the display device 105Acan display high-quality images with high color reproducibility.

Furthermore, by providing the alignment film 133 a flatly, the initialalignment can be made uniform more easily, even near the edge of thepixel electrode 111. Providing the alignment film 133 a flatly canreduce the generation of the region prone to the initial alignmentvariation of the liquid crystal layer 113 between two adjacentsubpixels. Thus, the aperture ratio can be increased, and the displaydevice can easily achieve a high resolution.

In FIG. 7, the reflective layer 116 is provided to overlap with thecommon electrode 112. The reflective layer 116 is electrically connectedto the common electrode 112. In the case where the reflective layer 116is electrically connected to the common electrode 112, the stackingorder of the reflective layer 116 and the common electrode 112 is notlimited in particular.

The display device 105A includes the light-blocking layer 132 in thedriver circuit portion 64 and the non-display region 93.

FIGS. 8A to 8D are top views of the subpixel included in the displaydevice 105B. FIG. 9 is a cross-sectional view of the display device105B. FIG. 8A is a top view, seen from the common electrode 112 side, ofa stacked structure including the common electrode 112 to the conductivelayer 222 in the subpixel of the display device 105B. In FIG. 8A, thetransmissive region 91 and the reflective region 92 are shown bydashed-dotted lines. FIG. 8B is a top view obtained by excluding thecommon electrode 112 from the stacked structure shown in FIG. 8A. FIG.8C is a top view obtained by excluding the pixel electrode 111 from thestacked structure shown in FIG. 8B. FIG. 8D is a top view obtained byexcluding the reflective layer 116 from the stacked structure shown inFIG. 8C.

The display device 105B shown in FIG. 9 includes a light-blocking layer132, an insulating layer 212, and a gate 223, in addition to thestructure of the display device 105 described above.

In a display device of one embodiment of the present invention, atransistor with gate electrodes provided above and below a channel maybe used.

In the contact area Q1 illustrated in FIG. 8D, the gates 221 and 223 areelectrically connected. A transistor that that has two gates that areelectrically connected to each other can have a higher field-effectmobility and thus have higher on-state current than the othertransistors. Consequently, a circuit capable of high-speed operation canbe obtained. Furthermore, the area occupied by a circuit portion can bereduced. The use of the transistor having a high on-state current canreduce signal delay in wirings and can suppress display unevenness evenin a display panel or a display device in which the number of wirings isincreased because of an increase in size or resolution. In addition, theuse of such a configuration allows fabrication of a highly reliabletransistor.

In the contact area Q2 illustrated in FIG. 8B, the low-resistance region231 b of the semiconductor layer is connected to the pixel electrode111. The use of a material that transmits visible light in thesemiconductor layer allows the contact area Q2 to be provided in thetransmissive region 91. This can increase the aperture ratio andfacilitate the fabrication of a display device with high resolution.

In other words, in FIGS. 8A to 8D, a part of one conductive layerfunctions as a scan line 228, and another part of the conductive layerfunctions as the gate 223. One of the gates 221 and 223 that has thelower resistance of the two is preferably the conductive layer that alsoserves as the scan line.

In other words, in FIGS. 8A to 8D, a part of one conductive layerfunctions as a signal line 229, and another part of the conductive layerfunctions as the conductive layer 222.

The gates 221 and 223 can each include a single layer of one of a metalmaterial and an oxide conductor (OC), or stacked layers of both a metalmaterial and an oxide conductor. For example, one of the gates 221 and223 may include an oxide conductor, and the other of the gates 221 and223 may include a metal material.

The transistor 206 can be formed to include the oxide semiconductorlayer as a semiconductor layer, and include the oxide conductive layeras at least one of the gates 221 and 223. In this case, the oxidesemiconductor layer and the oxide conductive layer are preferably formedusing an oxide semiconductor.

FIG. 8A and FIG. 9 illustrate an example where one opening is providedin the common electrode 112 in one subpixel. As the resolution ofdisplay devices become higher, the area of one pixel becomes smaller.Thus, the number of openings provided in the common electrode 112 is notlimited to more than one; one opening can be provided. In a displaydevice with high resolution, the area of the subpixel is small;therefore, an adequate electric field for the alignment of liquidcrystals over the entire display region of the subpixel can begenerated, even when there is only one opening in the common electrode112. The opening of the common electrode 112 may be provided in eitherone of the transmissive region 91 and the reflective region 92 or both.

FIGS. 10A to 10C, FIGS. 11A to 11C, and FIGS. 12A to 12C aremodification examples of the top views of the subpixel. FIG. 10A, FIG.11A, and FIG. 12A are top views, seen from the common electrode 112side, of a stacked structure (e.g., see FIG. 9) including the commonelectrode 112 to the conductive layer 222 in a subpixel. In FIG. 10A,FIG. 11A, and FIG. 12A, the transmissive region 91 and the reflectiveregion 92 are shown by dashed-dotted lines. FIG. 10B, FIG. 11B, and FIG.12B are top views obtained by excluding the common electrode 112 fromthe stacked structure shown in FIG. 10A, FIG. 11A, and FIG. 12A. FIG.10C, FIG. 11C, and FIG. 12C are top views obtained by excluding thepixel electrode 111 from the stacked structure shown in FIG. 10B, FIG.11B, and FIG. 12B.

The pixel electrode 111 and the reflective layer 116 in a subpixel canbe provided to overlap with at least one of a transistor included in thesubpixel, a transistor included in an adjacent subpixel, and a scan lineand a signal line that are electrically connected to the transistors.

In FIGS. 10A to 10C, the pixel electrode 111 and the reflective layer116 overlap with the signal line 229 (partly serving as the conductivelayer 222). A transistor electrically connected to the signal line 229and the pixel electrode 111 are included in the same subpixel. The pixelelectrode 111 and the reflective layer 116 overlap with the scan line228. A transistor electrically connected to the scan line 228 and thepixel electrode 111 are included in different subpixels. Specifically,the transistor is included in an adjacent subpixel on the lower side ofthe drawing.

In FIGS. 11A to 11C, the pixel electrode 111 and the reflective layer116 overlap with the signal line 229. A transistor electricallyconnected to the signal line 229 and the pixel electrode 111 areincluded in different subpixels. Specifically, the transistor isincluded in an adjacent subpixel on the right side of the drawing. Thepixel electrode 111 and the reflective layer 116 overlap with the scanline 228. A transistor electrically connected to the scan line 228 andthe pixel electrode 111 are included in the same subpixel.

In FIGS. 12A to 12C, the pixel electrode 111 and the reflective layer116 overlap with the signal line 229. A transistor electricallyconnected to the signal line 229 and the pixel electrode 111 areincluded in different subpixels. Specifically, the transistor isincluded in an adjacent subpixel on the right side of the drawing. Thepixel electrode 111 and the reflective layer 116 overlap with the scanline 228. A transistor electrically connected to the scan line 228 andthe pixel electrode 111 are included in different subpixels.Specifically, the transistor is included in an adjacent subpixel on thelower side of the drawing.

In FIG. 13A, two transmissive regions 91 and two reflective regions 92of the display device 105C are shown. The pixel electrode 111electrically connected to the transistor 206 on the right side overlapswith the transistor 206 on the left side. The reflective layer 116 isprovided between the pixel electrode 111 and the transistor 206 on theleft side. That is, in the display device 105C, the transmissive region91 on the right side and the reflective region 92 on the left side aredriven by the transistor 206 on the right side to perform display.

As shown in FIG. 13B, the pixel electrode 111 is not necessarilyprovided in the reflective region 92.

As described above, the degree of freedom in pixel layout is high in thedisplay device of one embodiment of the present invention. Therefore, byappropriately disposing the pixel electrode 111 and the reflective layer116 in accordance with the design rule or the like, the area of thetransmissive region 91 and the reflective region 92 can be increased,and the aperture ratio can be increased easily.

The display device 105D shown in FIG. 14 includes the insulating layer212, an insulating layer 216, and the gate 223 in addition to thestructure of the above-described display device 105. The display device105D does not include the reflective layer 116 that the display device105 includes.

The gate 223 in the display device 105D also serves as a layer thatreflects visible light in the reflective region 92. Thus, it is notnecessary to form the reflective layer additionally, so that thestructure and the manufacturing process of the display device can besimplified.

When a material that transmits visible light (e.g., an oxide conductor)is used for the gate 221, light from the backlight may enter the channelregion 231 a. This may degrade the reliability of the transistor 206.

Accordingly, the conductive layer 222 is preferably placed to overlapthe channel region 231 a, as shown in FIG. 14. This can inhibit thechannel region 231 a being irradiated with light from the backlight,thereby inhibiting the reliability degradation of the transistor 206.

Note that an insulating layer is formed thick between the gate 221 andthe conductive layer 222, so that the parasitic capacitance between thegate 221 and the conductive layer 222 is reduced. For example, anorganic insulating layer may be provided as the insulating layer 216.

1-3. Fabrication Method Example 1 of Display Device

One example of the fabrication method of the display device 105Dillustrated in FIG. 14 is described with reference to FIG. 15A to FIG.19B. Note that Embodiment 2 can be referred to for the details of thefabrication method of the transistor.

Note that the thin films constituting the display device (i.e., theinsulating film, the semiconductor film, the conductive film, and thelike) can be formed by any of a sputtering method, a chemical vapordeposition (CVD) method, a vacuum evaporation method, a pulsed laserdeposition (PLD) method, an atomic layer deposition (ALD) method, or thelike. As examples of a CVD method, a plasma-enhanced CVD (PECVD) methodor a thermal CVD method or the like can be given. As an example of thethermal CVD method, metal organic CVD (MOCVD) method can be given.

Alternatively, the thin films constituting the display device (i.e., theinsulating film, the semiconductor film, the conductive film, and thelike) can be formed by a method such as spin coating, dipping, spraycoating, inkjet printing, dispensing, screen printing, or offsetprinting, or with a doctor knife, a slit coater, a roll coater, acurtain coater, or a knife coater.

The thin films constituting the display device can be processed using aphotolithography method or the like. Alternatively, island-shaped thinfilms may be formed by a film formation method using a blocking mask.Alternatively, the thin films may be processed by a nano-imprintingmethod, a sandblasting method, a lift-off method, or the like. Examplesof the photolithography method include a method in which a resist maskis formed over a thin film to be processed, the thin film is processedby etching or the like, and the resist mask is removed, and a method inwhich a photosensitive thin film is formed, and the photosensitive thinfilm is exposed to light and developed to be processed in a desiredshape.

As light used in exposure in a photolithography method, light with ani-line (with a wavelength of 365 nm), light with a g-line (with awavelength of 436 nm), light with an h-line (with a wavelength of 405nm), and light in which the i-line, the g-line, and the h-line are mixedcan be given. Alternatively, ultraviolet light, KrF laser light, ArFlaser light, or the like can be used. Exposure may be performed byliquid immersion exposure technique. As light used in exposure, extremeultra-violet light (EUV), X-rays or the like can be given. An electronbeam can be used instead of a light used in exposure. It is preferableto use extreme ultra-violet light (EUV), X-rays, or an electron beambecause extremely minute processing can be performed. Note that whenexposure is performed by scanning of a beam such as an electron beam, aphotomask is not needed.

For etching of the thin film, dry etching, wet etching, a sandblastmethod, or the like can be used.

A functional element can be formed over a fabrication substrate,separated from the fabrication substrate, and then transferred toanother substrate. With this method, for example, a functional elementthat is formed over a fabrication substrate having high heat resistancecan be transferred to a substrate having low heat resistance. Therefore,the manufacturing temperature of the functional element is not limitedby the substrate having low heat resistance. Moreover, the functionalelement can be transferred to a substrate or the like which is morelightweight, flexible and thinner than the fabrication substrate,whereby a variety of devices such as a semiconductor device, a displaydevice, and the like can be made lightweight, flexible, and thin.

Specifically, the functional element formed over the first substrate canbe transferred to the second substrate by forming a separation layerover the first substrate, forming an oxide layer above the separationlayer, forming the functional element over the oxide layer, bonding thefirst and second substrates using an adhesion layer, and separating thefirst and second substrates. FIG. 15A to FIG. 19B illustrate an examplewhere an oxide insulating layer is used for the oxide layer.

First, as shown in FIG. 15A, a separation layer 303 is formed over afabrication substrate 301, and an oxide insulating layer 305 is formedover the separation layer 303.

A heat-resistant substrate that can withstand at least the processingtemperature during the fabrication is used as the fabrication substrate301. As the fabrication substrate 301, for example, a glass substrate, aquartz substrate, a sapphire substrate, a semiconductor substrate, aceramic substrate, a metal substrate, or a plastic substrate can beused.

Note that it is preferable to use a large-sized glass substrate as thefabrication substrate 301 in terms of productivity. For example, a glasssubstrate having a size greater than or equal to the 3rd generation (550mm×650 mm) and less than or equal to the 10th generation (2950 mm×3400mm) or a glass substrate having a larger size than the 10th generationis preferably used.

In the case where a glass substrate is used as the fabrication substrate301, an insulating layer such as a silicon oxide film, a siliconoxynitride film, a silicon nitride film, or a silicon nitride oxide filmis preferably formed as a base film between the fabrication substrate301 and the separation layer 303, in which case contamination from theglass substrate can be prevented.

The separation layer 303 can be formed using an element selected fromtungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt,zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, andsilicon; an alloy material containing any of the elements; a compoundmaterial containing any of the elements; or the like. A crystalstructure of a layer containing silicon may be amorphous, microcrystal,or polycrystal. Furthermore, a metal oxide such as aluminum oxide,gallium oxide, zinc oxide, titanium dioxide, indium oxide, indium tinoxide, indium zinc oxide, or an In—Ga—Zn oxide can be used. Theseparation layer 303 is preferably formed using a high-melting-pointmetal material such as tungsten, titanium, or molybdenum, in which casethe degree of freedom of the process for forming the functional elementand the like can be increased.

The separation layer 303 can be formed by, for example, a sputteringmethod, a plasma CVD method, a coating method (including a spin coatingmethod, a droplet discharging method, a dispensing method, and thelike), a printing method, or the like. The thickness of the separationlayer 303 is, for example, greater than or equal to 1 nm and less thanor equal to 200 nm, or preferably greater than or equal to 10 nm andless than or equal to 100 nm. The separation layer 303 may be formed ina shape of an island over the fabrication substrate 301.

In the case where the separation layer 303 has a single-layer structure,a tungsten layer, a molybdenum layer, or a layer containing a mixture oftungsten and molybdenum is preferably formed. Alternatively, a layercontaining an oxide or an oxynitride of tungsten, a layer containing anoxide or an oxynitride of molybdenum, or a layer containing an oxide oran oxynitride of a mixture of tungsten and molybdenum may be formed.Note that the mixture of tungsten and molybdenum corresponds to, forexample, an alloy of tungsten and molybdenum.

In the case where the separation layer 303 is formed to have a stackedstructure of a layer containing tungsten and a layer containing an oxideof tungsten, the layer containing an oxide of tungsten may be formed asfollows: the layer containing tungsten is formed first and an insulatinglayer formed of an oxide is formed thereover, so that the layercontaining an oxide of tungsten is formed at the interface between thetungsten layer and the insulating layer. Alternatively, the layercontaining an oxide of tungsten may be formed by performing thermaloxidation treatment, oxygen plasma treatment, nitrous oxide (N₂O) plasmatreatment, treatment with a highly oxidizing solution such as ozonewater, or the like on the surface of the layer containing tungsten.Plasma treatment and heat treatment may be performed in an atmosphere ofoxygen, nitrogen, or nitrous oxide alone, or a mixed gas of any of thesegasses and another gas. By changing the surface condition of theseparation layer 303 by the plasma treatment or heat treatment, adhesionbetween the separation layer 303 and the insulating film formed latercan be controlled.

The oxide insulating layer 305 preferably has a single-layer structureor a stacked structure including any of a silicon oxide film, a siliconoxynitride film, a silicon nitride oxide film, and the like.

The oxide insulating layer 305 can be formed by a sputtering method, aplasma CVD method, a coating method, a printing method, or the like. Forexample, the oxide insulating layer 305 is formed at a temperaturehigher than or equal to 250° C. and lower than or equal to 400° C. by aplasma CVD method, whereby the oxide insulating layer 305 can be a densefilm having an excellent moisture-resistant property. The thickness ofthe oxide insulating layer ranges preferably from 10 nm to 3000 nm, morepreferably from 200 nm to 1500 nm.

Next, the common electrode 112 and the conductive layer 251 are formedover the oxide insulating layer 305. Note that an insulating layer(nitride insulating layer, oxide insulating layer or the like) may beformed over the oxide insulating layer 305, before the common electrode112 is formed.

In one embodiment of the present invention, the common electrode 112 isformed before the transistor is formed; thus, the common electrode 112can be formed on a flat surface.

Next, the insulating layer 220 that covers the common electrode 112 andthe conductive layer 251 is formed. Next, the pixel electrode 111 andthe conductive layer 253 are formed over the insulating layer 220. Next,the insulating layer 211 that covers the pixel electrode 111 and theconductive layer 253 is formed (FIG. 15B).

Next, the gate 223 is formed over the insulating layer 211, and theinsulating layer 212 that covers the gate 223 is formed (FIG. 15C).

Next, an opening portion that reaches the pixel electrode 111 and anopening portion that reaches the conductive layer 253 are formed bypartly etching the insulating layers 211 and 212 (FIG. 16A). An examplein which the insulating layers 211 and 212 are etched together is shownas an example, but one embodiment of the present invention is notlimited to this example.

Next, an island-shaped semiconductor layer 231 is formed to cover theopening portions provided in the insulating layers (FIG. 16B).

Next, an insulating layer 213_0 that covers the semiconductor layer 231is formed, and a conductive layer 221_0 is formed over the insulatinglayer 213_0 (FIG. 17A).

Next, the island-shaped gate insulating layer 213 and the island-shapedgate 221 are formed by processing the insulating layer 213_0 and theconductive layer 221_0. Then, the insulating layer 214 that covers thegate insulating layer 213 and the gate 221 is formed (FIG. 17B).

Forming the insulating layer 214 that contains nitrogen or hydrogen andthen performing a heat treatment on the insulating layer 214 suppliesnitrogen or hydrogen to portions of the semiconductor layer that do notoverlap with the gate 221 and the gate insulating layer 213, therebyforming the low-resistance region 231 b.

The low-resistance region 231 b may be formed by adding impurities tothe semiconductor layer 231 after forming the island-shaped gateinsulating layer 213 and the island-shaped gate 221, and before formingthe insulating layer 214. The low-resistance region 231 b may be formedby adding impurities to the semiconductor layer 231 after forming theinsulating layer 214. The impurities may be added to the semiconductorlayer 231 after forming at least one of the insulating layers 215 and216, which will be described later.

The supply of impurities to the portion of the semiconductor layer thatoverlaps with the gate 221 and the gate insulating layer 213 is reducedcompared with the supply of impurities to the portion that do notoverlap; thus, the decrease in resistivity is inhibited, and the portionthat overlaps with the gate 221 and the gate insulating layer 213 canfunction as the channel region 231 a.

Next, the insulating layers 215 and 216 are formed. An opening portionthat reaches the low-resistance region 231 b and an opening portion thatreaches the conductive layer 255 are formed by partly etching theinsulating layers 214, 215, and 216. Note that the plurality ofinsulating layers may be processed in different process steps, or twolayers or more can be processed in the same process step at a time.Next, the conductive layer 222 and the wiring 65 are formed by forming aconductive layer over the low-resistance region 231 b so that theconductive layer covers the opening portion provided in the insulatinglayer, and then processing the conductive layer into a desired shape(FIG. 18A).

Next, as illustrated in FIG. 18B, the fabrication substrate 301 and thesubstrate 51 are bonded to each other with the adhesion layer 142.

Next, as illustrated in FIG. 19A, the fabrication substrate 301 and theoxide insulating layer 305 are separated from each other. An example inwhich a separation is performed between the separation layer 303 and theoxide insulating layer 305 is shown here.

Before the separation of the fabrication substrate 301 and the oxideinsulating layer 305, a starting point of separation is preferablyformed using laser light, a sharp knife, or the like. A starting pointfor separation can be formed by cracking (or breaking) a part of theoxide insulating layer 305. For example, laser light irradiation enablespart of the oxide insulating layer 305 to be melted, evaporated, orthermally broken.

Next, the oxide insulating layer 305 and the fabrication substrate 301are separated from the formed starting point of separation by physicalforce (e.g., a separation process with a human hand or a jig, or aseparation process by rotation of a roller adhered to the substrate).The separation layer 303 and the formation substrate 301 that areseparated from the oxide insulating layer 305 are illustrated in thelower part of FIG. 19A.

Next, the oxide insulating layer 305 is removed. For the removal of theoxide insulating layer 305, for example, one or both of a wet etchingmethod and a dry etching method can be used. Removal of the oxideinsulating layer 305 allows the exposure of the common electrode 112 andthe conductive layer 251 (FIG. 19B).

Next, the alignment film 133 a is formed over a surface of the commonelectrode 112. Note that when the oxide insulating layer 305 serves asthe alignment film 133 a, some portions of the oxide insulating layer305 can be left unremoved. For example, a portion of the oxideinsulating layer 305 that overlaps with the common electrode 112 may beleft remaining. In addition, the oxide insulating layer 305 may bepartly removed so that the conductive layer 251 is exposed.

Subsequently, a liquid crystal layer 113 is encapsulated between thesubstrate 51 and the substrate 61 over which the coloring layer 131, thelight-blocking layer 132, the alignment film 133 b and the like areformed, using the adhesion layer 141. Through the process describedabove, the display device 105D can be fabricated.

As described above, in one embodiment of the present invention,functional elements constituting the display device, such as atransistor and a liquid crystal element, are formed over the fabricationsubstrate. Thus, there is almost no limitation on the heat that isapplied during the formation processes of the functional elements.Highly reliable functional elements that are fabricated in ahigh-temperature process can be transferred on a substrate constitutingthe display device, with high yield. This enables the fabrication of ahighly reliable display device.

In one embodiment of the present invention, an electrode of the liquidcrystal element can be formed on a flat surface because the electrode ofthe liquid crystal element is formed before a transistor is formed.Thus, variation of the cell gap and variation in the initial alignmentof the liquid crystal can be reduced. This allows the increase ofaperture ratio and the fabrication of a display device with highresolution.

1-4. Fabrication Method Example 2 of Display Device

An example of the fabrication method of the display device 105Aillustrated in FIG. 7 is described in reference to FIGS. 20A to 20C andFIGS. 21A and 21B.

FIGS. 20A to 20C and FIGS. 21A and 21B illustrate an example in which anoxide insulating layer and an oxide conductive layer are used as theoxide layers that are in contact with the separation layer.

First, as illustrated in FIG. 20A, the separation layer 303 is formedover the fabrication substrate 301.

Next, the pixel electrode 111 and the conductive layer 251 are formedover the separation layer 303 (FIG. 20A). Here, the pixel electrode 111and the conductive layer 251 are formed using an oxide conductive layer.

Examples of materials that can be used for the oxide conductive layerinclude indium oxide, ITO, indium oxide containing tungsten oxide,indium zinc oxide containing tungsten oxide, indium oxide containingtitanium oxide, indium tin oxide containing titanium oxide, indium zincoxide, and ITSO.

Alternatively, an In-M-Zn oxide that contains at least indium (In), zinc(Zn), and M (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, La, Ce, Nd, Sn,or Hf) can be used for the oxide conductive layer. The oxide conductivelayer preferably contains one or more kinds of metal elements includedin the oxide semiconductor layer of the transistor.

In one embodiment of the present invention, the pixel electrode 111 isformed before the transistor is formed; thus, the pixel electrode 111can be formed on a flat surface.

Next, the insulating layer 220 that covers the pixel electrode 111 andthe conductive layer 251 is formed. When the insulating layer 220 is asingle film, the insulating layer 220 is an oxide insulating layer. Whenthe insulating layer 220 has a stacked structure, the layer included inthe insulating layer 220 that is in contact with the separation layer303 is an oxide insulating layer.

Next, the common electrode 112 and the conductive layer 253 are formedover the insulating layer 220. Next, the reflective layer 116 is formedover a part of the common electrode 112. A region in which thereflective layer 116 is formed serves as the reflective region 92. Next,the insulating layer 211 that covers the common electrode 112 and theconductive layer 253 is formed. Next, the transistors 201 and 206 andthe like are formed over the insulating layer 211 (FIG. 20B).

Next, as illustrated in FIG. 20C, the fabrication substrate 301 and thesubstrate 51 are bonded to each other with the adhesion layer 142.

Next, as illustrated in FIG. 21A, the fabrication substrate 301 and thepixel electrode 111, the conductive layer 251, and the insulating layer220 are separated. An example in which a separation is performed betweenthe separation layer 303 and the pixel electrode 111, the conductivelayer 251, and the insulating layer 220 is shown here. The separationlayer 303 and the formation substrate 301 that are separated from thepixel electrode 111, the conductive layer 251, and the insulating layer220 are illustrated in the lower part of FIG. 21A.

In this fabrication method example, an oxide conductive layer is usedfor the pixel electrode 111 and the conductive layer 251, and an oxideinsulating layer is used for the insulating layer 220. Thus, thefabrication substrate 301 and the substrate 51 can be separated withoutformation of an oxide layer at the interface between the separationlayer 303 and the pixel electrode 111, the conductive layer 251, and theinsulating layer 220 (FIGS. 21A and 21B). This allows the separation ofthe fabrication substrate 301 and the exposure of the pixel electrode111 and the conductive layer 251. Because a process step to remove anoxide layer becomes unnecessary, the fabrication process of the displaydevice can be shortened. Note that in the case where the commonelectrode 112 is formed before the pixel electrode 111, an oxideconductive layer is used as the common electrode 112, whereby themanufacture substrate 301 can be separated from the substrate 51 withoutformation of another oxide layer.

Next, the alignment film 133 a is formed over the pixel electrode 111.Subsequently, the liquid crystal layer 113 is encapsulated between thesubstrate 51 and the substrate 61 over which the coloring layer 131, thelight-blocking layer 132, the alignment film 133 b and the like areformed, using the adhesion layer 141. Through the process describedabove, the display device 105A can be fabricated.

As described above, in one embodiment of the present invention, most offunctional elements that constitute a display device, such as a such asa transistor or a liquid crystal element, are fabricated on thefabrication substrate; therefore, the functional elements can befabricated using high temperature regardless of the materials of thesubstrate 51 and the substrate 61. This enables the fabrication of ahighly reliable display panel.

In one embodiment of the present invention, an electrode of the liquidcrystal element can be formed on a flat surface because the electrode ofthe liquid crystal element is formed before a transistor is formed.Thus, variation of the cell gap and variation in the initial alignmentof the liquid crystal can be reduced.

In one embodiment of the present invention, the fabrication of thedisplay device can progress directly after the separation of thefabrication substrate, without performing a process step to remove anunnecessary film. This enables a shortening of the fabrication processand the reduction in manufacturing cost.

1-5. Fabrication Method Example 3 of Display Device

An example of the fabrication method of the display device 105Dillustrated in FIG. 14 is described in reference to FIGS. 22A to 22C andFIGS. 23A and 23B.

FIGS. 22A to 22C and FIGS. 23A and 23B illustrate an example in which aseparation is performed at the interface between the fabricationsubstrate and the separation layer. In the example, the separation layeris used as an alignment film.

First, as illustrated in FIG. 22A, a separation layer 309 is formed overthe fabrication substrate 301.

The separation layer 309 is later used as the alignment film 133 a. Anorganic resin such as polyimide, polyester, polyolefin, polyamide,polycarbonate, or acrylic can be formed as the separation layer 309.Next, laser irradiation or heat treatment is preferably performed toimprove the adhesion between the fabrication substrate and the organicresin.

Next, the common electrode 112 and the conductive layer 251 are formedover the separation layer 309.

In one embodiment of the present invention, the common electrode 112 isformed before the transistor is formed; thus, the common electrode 112can be formed on a flat surface.

Next, the insulating layer 220 that covers the common electrode 112 andthe conductive layer 251 is formed. Next, the pixel electrode 111 andthe conductive layer 253 are formed over the insulating layer 220. Next,the insulating layer 211 that covers the pixel electrode 111 and theconductive layer 253 is formed. Next, the transistors 201 and 206 andthe like are formed over the insulating layer 211 (FIG. 22B).

Next, as illustrated in FIG. 22C, the fabrication substrate 301 and thesubstrate 51 are bonded to each other with the adhesion layer 142.

Next, as illustrated in FIG. 23A, the fabrication substrate 301 and theseparation layer 309 are separated from each other. For example, theseparation can be performed at the interface between the fabricationsubstrate 301 and the separation layer 309 by performing laserirradiation with higher energy density than the energy density of theabove-described laser irradiation, or performing heat treatment at atemperature higher than the temperature of the above-described heattreatment. Note that the treatment to improve the adhesion between thefabrication substrate and the organic resin and one of the treatmentsdescribed here, e.g., laser irradiation or heat treatment, may beperformed. In addition, a liquid may be injected into the interfacebetween the fabrication substrate 301 and the separation layer 309before or during the separation.

Alternatively, the separation may be performed at the interface betweena metal layer and the separation layer 309 by providing the metal layerbetween the fabrication substrate 301 and the separation layer 309, andheating the metal layer by supplying a current to the metal layer.

Next, a part of the separation layer 309 is removed, thereby exposingthe conductive layer 251 (FIG. 23B). The remaining part of theseparation layer 309 can be used as the alignment film 133 a. Of theseparation layer 309, the top surface of the part that is left remainingis preferably subjected to a rubbing treatment.

Subsequently, the liquid crystal layer 113 is encapsulated between thesubstrate 51 and the substrate 61 over which the coloring layer 131, thelight-blocking layer 132, and the alignment film 133 b are formed, usingthe adhesion layer 141. Through the methods described above, the displaydevice 105C can be fabricated.

As described above, in one embodiment of the present invention, most offunctional elements that constitute a display device, such as atransistor or a liquid crystal element, are fabricated on thefabrication substrate; therefore, the functional elements can befabricated using high temperature regardless of the materials used forthe substrate 51 and the substrate 61. This enables the fabrication of ahighly reliable display panel.

In one embodiment of the present invention, an electrode of the liquidcrystal element can be formed on a flat surface because the electrode ofthe liquid crystal element is formed before forming a transistor. Thus,variation of the cell gap and variation in the initial alignment of theliquid crystal can be reduced.

1-6. Structure Example 3 of Display Device

Examples of the display device are shown in FIG. 24. FIG. 24 is across-sectional view of a display device 105E. Note that the perspectiveview of the display device 105E is not drawn here, as it is similar tothe perspective view of the display device 105 illustrated in FIGS. 2Ato 2C.

The display device 105E illustrated in FIG. 24 is an example of a liquidcrystal display device that includes a liquid crystal element with avertical electric field mode.

As illustrated in FIG. 24, the display device 105E includes thesubstrate 51, the adhesion layer 142, the transistor 201, the transistor206, the liquid crystal element 40, the reflective layer 116, thealignment film 133 a, the alignment film 133 b, the connection portion204, a connection portion 252, the adhesion layer 141, the coloringlayer 131, the light-blocking layer 132, the overcoat 121, the substrate61, the polarizer 130, and the like.

The display portion 62 includes the transistor 206 and the liquidcrystal element 40.

The transistor 206 includes the gate 221, the gate insulating layer 213,and a semiconductor layer (the channel region 231 a and thelow-resistance region 231 b).

The conductive layer 222 is connected with the low-resistance region 231b through an opening formed in the insulating layers 214 and 215.

The liquid crystal element 40 is a liquid crystal element with avertical alignment (VA) mode. The liquid crystal element 40 includes thepixel electrode 111, the common electrode 112, and the liquid crystallayer 113. The liquid crystal layer 113 is positioned between the pixelelectrode 111 and the common electrode 112.

A conductive layer 227 that transmits visible light is provided betweenthe pixel electrode 111 and the insulating layer 212. The insulatinglayer 220 is positioned between the pixel electrode 111 and theconductive layer 227. The pixel electrode 111 functions as one electrodeof a capacitor. The conductive layer 227 functions as the otherelectrode of the capacitor. The conductive layer 227 is supplied with apredetermined potential through a wiring (not drawn), for example.

The pixel electrode 111 is electrically connected to the low-resistanceregion 231 b of the semiconductor layer of the transistor 206.

In the connection portion 207, the low-resistance region 231 b of thesemiconductor layer is connected to the pixel electrode 111. Thelow-resistance region 231 b of the semiconductor layer includes aportion that is in contact with side surfaces of an opening portion inthe insulating layer 212 and the insulating layer 220. Thelow-resistance region 231 b of the semiconductor layer is in contactwith the side surfaces of the opening portion in the insulating layer212 and the insulating layer 220, while at the same time being connectedto the pixel electrode 111. This enables the pixel electrode 111 to beplaced flatly.

The use of a material that transmits visible light for the semiconductorlayer allows the connection portion 207 to be provided in thetransmissive region 91. Thus, the area of the transmissive region 91 canbe increased.

The connection portion 207 on the substrate 61 side does not include anuneven surface. Thus, the surface of each of the pixel electrode 111,the insulating layer 220, and the alignment film 133 a on the substrate61 side is flat. Therefore, a region provided with the connectionportion 207 can be used to display images, similarly to other regions.This can increase the aperture ratio of the display device andfacilitate the fabrication of a display device with high resolution.

The reflective layer 116 is provided to overlap with the conductivelayer 222 and the gate 221 of the transistor 206. The reflective layer116 is provided in contact with the pixel electrode 111.

The reflective layer 116 is provided to overlap with the region thatblocks visible light in the display portion 62. When such a structure isemployed, the region that blocks visible light in the display portion 62can be used as the reflective region 92. Furthermore, a portion of thedisplay device that contributes to display can be enlarged, andaccordingly, the display device can have a high aperture ratio.Moreover, the display device can have high resolution.

The common electrode 112 is electrically connected to a conductive layer118 through a connector 243. The conductive layer 118 can be formed withthe same material and the same fabrication step as those used for thepixel electrode 111. In the connection portion 252, a conductive layerthat is provided closer to the substrate 51 than the liquid crystallayer 113 is electrically connected to the common electrode 112. Thisallows a constant potential to be supplied to the common electrode 112through the FPC 72.

As the connector 243, a conductive particle can be used, for example. Aparticle of an organic resin, silica, or the like coated with a metalmaterial can be used as the conductive particle. Nickel or gold ispreferably used as the metal material because contact resistance can bedecreased. A use of a particle coated with layers of two or more kindsof metal materials, such as a particle coated with nickel and furtherwith gold, is also preferable. A material capable of elastic deformationor plastic deformation is preferably used as the connector 243. Asillustrated in FIG. 24, the conductive particle has a shape that isvertically crushed in some cases. With the crushed shape, the contactarea between the connector 243 and a conductive layer electricallyconnected to the connector 243 can be increased, thereby reducingcontact resistance and reducing issues such as disconnection.

The connector 243 is preferably provided so as to be covered with theadhesion layer 141. For example, the connector 243 may be dispersedwithin the adhesion layer 141 before the curing thereof.

When the overcoat 121 has a planarization function, the common electrode112 can be provided flatly. This allows a thickness variation of theliquid crystal layer 113 to be reduced.

The transistors 201 and 206 may include the gate 223 that is formed withthe same material and the same fabrication step as those used in theconductive layer 227 that transmits visible light. FIG. 24 illustratesan example in which the gate 223 is provided only in the driver circuitportion 64.

1-7. Structure Example 4 of Display Device

One embodiment of the present invention can be applied to a displaydevice in which a touch sensor is implemented; such a display device isalso referred to as an input/output device or a touch panel. Any of thestructures of the display device described above can be applied to thetouch panel. In this embodiment, the description focuses on an examplein which the touch sensor is implemented in the display device 105C.

There is no limitation on the sensing element (also referred to as asensor element) included in the touch panel of one embodiment of thepresent invention. A variety of sensors capable of sensing an approachor a contact of an object such as a finger or a stylus can be used asthe sensor element.

For example, a variety of types such as a capacitive type, a resistivetype, a surface acoustic wave type, an infrared type, an optical type,and a pressure-sensitive type can be used for the sensor.

In this embodiment, a touch panel including a capacitive sensor elementis described as an example.

Examples of the capacitive touch sensor element include a surfacecapacitive touch sensor element and a projected capacitive touch sensorelement. Examples of the projected capacitive sensor element include aself-capacitive sensor element and a mutual capacitive sensor element.The use of a mutual capacitive sensor element is preferable becausemultiple points can be sensed simultaneously.

The touch panel of one embodiment of the present invention can have anyof a variety of structures, including a structure in which a displaydevice and a sensor element that are separately formed are attached toeach other and a structure in which an electrode and the like includedin a sensor element are provided on one or both of a substratesupporting a display element and a counter substrate.

FIGS. 25A to 25C and FIG. 26 each illustrate an example of the displaydevice. FIG. 25A is a perspective view of a touch panel 355A. FIG. 25Bis a developed view of the schematic perspective view of FIG. 25A. Notethat for simplicity, FIGS. 25A and 25B illustrate only the majorcomponents. In FIG. 25B, the outlines of the substrate 61 and asubstrate 162 are illustrated only in dashed lines. FIG. 26 is across-sectional view of the touch panel 355A.

The touch panel 355A has a structure in which a display device and asensor element that are fabricated separately are bonded together.

The touch panel 355A includes an input device 375 and a display device370 that are provided to overlap with each other.

The input device 375 includes the substrate 162, an electrode 127, anelectrode 128, a plurality of wirings 138, and a plurality of wirings139. An FPC 72 b is electrically connected to each of the plurality ofwirings 138 and the plurality of wirings 139. An IC 73 b includes theFPC 72 b.

The display device 370 includes the substrate 51 and the substrate 61which are provided to face each other. The display device 370 includesthe display portion 62 and the driver circuit portion 64. The wiring 65and the like are provided over the substrate 51. An FPC 72 a iselectrically connected with the wiring 65. An IC 73 a is provided on theFPC 72 a.

The wiring 65 supplies signals and power to the display portion 62 andthe driver circuit portion 64. The signals and power are input to thewiring 65 from the outside or the IC 73 a, through the FPC 72 a.

FIG. 26 is a cross-sectional view of the display portion 62, the drivercircuit portion 64, a region that includes the FPC 72 a, a region thatincludes the FPC 72 b, and the like.

The substrates 51 and 61 are bonded to each other by the adhesion layer141. The substrates 61 and 162 are bonded to each other by an adhesionlayer 169. Here, the layers from the substrate 51 to the substrate 61correspond to the display device 370. The layers from the substrate 162to an electrode 124 correspond to the input device 375. That is, theadhesion layer 169 bonds the display device 370 and the input device 375together.

The structure of the display device 370 illustrated in FIG. 26 is astructure similar to the display device 105D illustrated in FIG. 14;detailed description is omitted here. The display device 370 can performdisplay using both the light 45 emitted from a backlight 161 and theexternal light 46.

A polarizer 165 is bonded to the substrate 51 with an adhesion layer167. A backlight 161 is bonded to the polarizer 165 with an adhesionlayer 163.

A polarizer 166 is bonded to the substrate 162 by an adhesion layer 168.A protection substrate 160 is bonded to the polarizer 166 by an adhesionlayer 164. The protection substrate 160 may be used as the substratethat objects such as a finger or a stylus directly contact, when thetouch panel 355A is incorporated into an electronic device. A substratethat can be used as the substrates 51 and 61 or the like can be used asthe protection substrate 160. A structure where a protective layer isformed on the surface of the substrate that can be used as thesubstrates 51 and 61 or the like is preferably used for the protectionsubstrate 160. Alternatively, a reinforced glass or the like ispreferably used as the protection substrate 160. The protective layercan be formed with a ceramic coating. The protective layer can be formedusing an inorganic insulating material such as silicon oxide, aluminumoxide, yttrium oxide, or yttria-stabilized zirconia (YSZ).

The polarizer 166 may be provided between the input device 375 and thedisplay device 370. In that case, the protection substrate 160, theadhesion layer 164, and the adhesion layer 168 that are illustrated inFIG. 26 are not necessarily provided. In other words, the substrate 162can be positioned on the outermost surface of the touch panel 355A. Theabove-described material that can be used for the protection substrate160 is preferably used for the substrate 162.

The electrodes 127 and 128 are provided over the substrate 162, on thesubstrate 61 side. The electrodes 127 and 128 are formed on the sameplane. An insulating layer 125 is provided to cover the electrodes 127and 128. The electrode 124 is electrically connected to two of theelectrodes 128 that are provided on both sides of the electrode 127,through an opening provided in the insulating layer 125.

In the conductive layers included in the input device 375, theconductive layers (e.g., the electrodes 127 and 128) that overlap withan opening portion (the transmissive region or the reflective region) ofa pixel are formed using a material that transmits visible light.

The wiring 139 that is obtained by processing the same conductive layeras the electrodes 127 and 128 is connected to a conductive layer 126that is obtained by processing the same conductive layer as theelectrode 124. The conductive layer 126 is electrically connected to theFPC 72 b through a connector 242 b.

Next, an example of a driving method of an input device (touch sensor)that can be applied to the display device of one embodiment of thepresent invention is described with reference to FIGS. 27A and 27B.

FIG. 27A is a block diagram illustrating the structure of a mutualcapacitive touch sensor. FIG. 27A illustrates a pulse voltage outputcircuit 601 and a current sensing circuit 602. Note that in FIG. 27A,six wirings X1 to X6 represent electrodes 621 to which a pulse isapplied, and six wirings Y1 to Y6 represent electrodes 622 that sensechanges in current. The number of such electrodes is not limited tothose illustrated in this example. FIG. 27A also illustrates a capacitor603 that is formed by the overlap of the electrodes 621 and 622, or bythe close arrangement of the electrodes 621 and 622. Note that thefunctions of the electrodes 621 and 622 may change places with eachother.

For example, the electrode 127 corresponds to one of the electrode 621or the electrode 622, and the electrode 128 corresponds to the other ofthe electrode 621 or the electrode 622.

The pulse voltage output circuit 601 is, for example, a circuit forsequentially inputting a pulse voltage to the wirings X1 to X6. Thecurrent sensing circuit 602 is, for example, a circuit for sensingcurrent flowing through each of the wirings Y1 to Y6.

An application of a pulse voltage to one of the wirings X1 to X6generates an electric field between the electrodes 621 and 622 of thecapacitor 603, and current flows through the electrode 622. Part of theelectric field generated between the electrodes is blocked when anobject such a finger or a stylus approaches or contacts the device, sothat the electric field intensity between the electrodes is changed.Consequently, the amount of current flowing through the electrode 622 ischanged.

For example, in the case where there is no approach or no contact of anobject, the amount of current flowing in each of the wirings Y1 to Y6depends on the amount of capacitance of the capacitor 603. In the casewhere part of an electric field is blocked by the approach or contact ofan object, a decrease in the amount of current flowing in the wirings Y1to Y6 is sensed. The approach or contact of an object can be detected byutilizing this change.

The current sensing circuit 602 may sense using an integral value (timeintegral value) of current flowing in a wiring. In that case, forexample, an integrator circuit can be used. Alternatively, the peakvalue of current may be sensed. In that case, for example, current maybe converted into voltage, and the peak voltage value may be sensed.

FIG. 27B is an example of a timing chart illustrating input and outputwaveforms in the mutual capacitive touch sensor in FIG. 27A. In FIG.27B, sensing in each row and each column is performed in one sensingperiod. FIG. 27B shows a period when the approach or contact of anobject is not detected (when the touch sensor is not touched) and aperiod when the approach or contact of an object is detected (when thetouch sensor is touched). Here, the wirings Y1 to Y6 each show awaveform of a voltage corresponding to the amount of current to besensed.

As shown in FIG. 27B, the wirings X1 to X6 are sequentially suppliedwith a pulse voltage. Accordingly, current flows in the wirings Y1 toY6. When the touch sensor is not touched, substantially the same currentflows in the wirings Y1 to Y6 in accordance with a change in voltages ofthe wirings X1 to X6; thus, the wirings Y1 to Y6 have similar outputwaveforms. Meanwhile, when the touch sensor is touched, current flowingin a wiring in a position which an object contacts or approaches amongthe wirings Y1 to Y6 is reduced; thus, the output waveforms are changedas illustrated in FIG. 27B.

FIG. 27B shows an example in which an object contacts or approaches theintersection of the wiring X3 and the wiring Y3 or the vicinity thereof.

A mutual capacitive touch sensor senses a change in current which occursdue to an electric field generated between a pair of electrodes beingblocked; the mutual capacitive touch sensor can obtain positionalinformation of an object in this manner. When the sensing sensitivity ishigh, the coordinates of the object can be determined even when theobject is far from a detection surface (e.g., a surface of the touchpanel).

By driving a touch panel by a method in which a display period of adisplay portion and a sensing period of a touch sensor do not overlapwith each other, the detection sensitivity of the touch sensor can beincreased. For example, a display period and a sensing period may beseparately provided in one display frame period. In that case, two ormore sensing periods are preferably provided in one frame period. Whenthe sensing frequency is increased, the detection sensitivity can befurther increased.

It is preferable that, as an example, the pulse voltage output circuit601 and the current sensing circuit 602 are formed in an IC chip. Forexample, the IC is preferably mounted on a touch panel or a substrate ina housing of an electronic device. In the case where the touch panel hasflexibility, parasitic capacitance can potentially be increased in abent portion of the touch panel, and the influence of noise canpotentially be increased. In view of this, an IC with a driving methodless influenced by noise is preferably used. For example, it ispreferable to use an IC to which a driving method capable of increasinga signal-noise ratio (S/N ratio) is applied.

1-8. Structure Example 5 of Display Device

Examples of the touch panel are illustrated in each of the FIGS. 28A to28C and FIG. 29. FIG. 28A is a perspective view of a touch panel 355B.FIG. 28B is a developed view of the schematic perspective view of FIG.28A. Note that for simplicity, FIGS. 28A and 28B illustrate only themajor components. In FIG. 28B, the outlines of the substrate 61 areillustrated only in dashed lines. FIG. 29 is a cross-sectional view ofthe touch panel 355B.

The touch panel 355B is an in-cell touch panel that has a function ofdisplaying an image and serves as a touch sensor.

The touch panel 355B has a structure in which electrodes constituting asensor element and the like are provided only on the counter substrate.Such a structure can make the touch panel thinner and more lightweightor reduce the number of components within the touch panel, compared witha structure in which the display device and the sensor element arefabricated separately and then are bonded together.

In FIGS. 28A and 28B, an input device 376 is provided on the substrate61. The wirings 138 and 139 and the like of the input device 376 areelectrically connected to the FPC 72 included in the display device 379.

With the above structure, the FPCs connected to the touch panel 355B canbe provided only on one substrate side (on the substrate 51 side in thisembodiment). Although two or more FPCs may be attached to the touchpanel 355B, it is preferable that the touch panel 355B be provided withone FPC 72 which has a function of supplying signals to both the displaydevice 379 and the input device 376 as illustrated in FIGS. 28A and 28B,for the simplicity of the structure.

The IC 73 may include a function of driving the input device 376.Another IC that drives the input device 376 may be provided over the FPC72. Alternatively, an IC that drives the input device 376 may be mountedon the substrate 51.

FIG. 29 is a cross-sectional view including a region that includes theFPC 72, a connection portion 69, the driver circuit portion 64, and thedisplay portion 62, each of which are illustrated in FIG. 28A.

When the gate 223 is formed using a material that reflects visiblelight, the gate 223 of the transistor 206 can also serve as thereflective layer in the reflective region.

In the connection portion 69, one of the wiring 139 (or the wiring 138)and one of a conductive layer 115 are electrically connected through theconnector 243.

The electrodes 124, 127 and 128 and the insulating layer 125 areprovided between the substrate 61 and an insulating layer 123. Theelectrodes 127 and 128 are formed on the same plane. The insulatinglayer 125 is provided to cover the electrodes 127 and 128. The electrode124 is electrically connected to two of the electrodes 128 that areprovided on both sides of the electrode 127, through an opening providedin the insulating layer 125. The electrodes 124, 127, and 128 eachtransmit visible light. When these electrodes transmit visible light,each of the electrodes can be placed to overlap with the opening portion(the transmissive region or the reflective region) of a pixel, which ispreferable because this can inhibit a reduction in aperture ratio. Notethat each of the electrodes 124, 127, and 128 may be formed using amaterial that blocks visible light. In addition, a light-blocking layeris preferably provided between the electrode that blocks visible lightand the substrate 61, so that the electrode is not seen by the user ofthe display device.

The touch panel 355B includes a conductive layer 244 between theovercoat 121 and the alignment film 133 b. The conductive layer 244 canfunction as a second common electrode. A constant potential is suppliedto the conductive layer 244.

The conductive layer 244 and the common electrode 112 are preferablysupplied with the same potential. The conductive layer 244 and thecommon electrode 112 may be connected to different power supply linesand supplied with potentials independently. The conductive layer 244 maybe electrically connected to the common electrode 112. For example, theconductive layer 244 and the common electrode 112 can be electricallyconnected to each other through a connector as in the connection portion69.

As the resolution of the display device become higher, the distancebetween the subpixels become shorter, resulting in an alignment defectof the liquid crystal becoming more likely. The display device of oneembodiment of the present invention is capable of applying a voltagebetween the conductive layer 244 and the pixel electrode 111, inaddition to applying a voltage between the common electrode 112 and thepixel electrode 111. Thus, the alignment condition of the liquid crystallayer 113 can be more reliably controlled.

The wiring 139 that is obtained by processing the same conductive layeras the electrodes 127 and 128 is connected to the conductive layer 126that is obtained by processing the same conductive layer as theelectrode 124. The conductive layer 126 is connected to a conductivelayer 245, which is obtained by processing the same conductive layer asthe conductive layer 244. The conductive layer 245 is electricallyconnected to the conductive layer 115 through the connector 243.

The touch panel 355B is supplied with a signal for driving a pixel and asignal for driving a sensor element from one FPC. Thus, the touch panel355B can easily be incorporated into an electronic device and allows areduction in the number of components.

1-9. Structure Example 6 of the Display Device

FIG. 30 illustrates an example of the touch panel. FIG. 30 is across-sectional view of a touch panel 355C.

The touch panel 355C is an in-cell touch panel that has a function ofdisplaying an image and serves as a touch sensor.

The touch panel 355C has a structure in which electrodes constituting asensor element and the like are provided only on a substrate thatsupports a display element. Such a structure can make the touch panelthinner and more lightweight and reduce the number of components withinthe touch panel, compared with a structure in which the display deviceand the sensor element are fabricated separately and then are bondedtogether, or a structure in which the sensor element is fabricated onthe counter substrate side.

The touch panel 355C illustrated in FIG. 30 includes an auxiliary wiring119, in addition to the structure of the display device 105D describedabove. The transistor 206 does not include the gate 223.

The auxiliary wiring 119 is electrically connected to the commonelectrode 112. By providing an auxiliary wiring that is electricallyconnected to the common electrode, a drop in voltage due to theresistance of the common electrode can be inhibited. In addition, when astacked structure of a conductive layer including a metal oxide and aconductive layer including a metal is used, these conductive layers areformed preferably by a patterning technique using a half tone mask,thereby simplifying the fabrication process.

The auxiliary wiring 119 is a film with smaller resistance than thecommon electrode 112. For example, the auxiliary wiring 119 can beformed to have a single-layer structure or a stacked structure using anyof metal materials such as molybdenum, titanium, chromium, tantalum,tungsten, aluminum, copper, silver, neodymium, and scandium, and analloy material containing any of these elements.

In the touch panel 355, the auxiliary wiring 119 preferably reflectsvisible light. The auxiliary wiring 119 that reflects visible light canalso serve as a reflective layer in the reflective region.

FIG. 30 is a cross-sectional view that includes two adjacent subpixels.The two subpixels illustrated in FIG. 30 are subpixels included indifferent pixels.

The touch panel 355C illustrated in FIG. 30 is capable of sensing anapproach or a contact or the like of an object utilizing the capacitanceformed between the common electrode 112 included in the left subpixeland the common electrode 112 included in the right subpixel. That is, inthe touch panel 355C, the common electrode 112 serves as both the commonelectrode of the liquid crystal element and the electrode of the sensorelement.

As described above, an electrode constituting a part of the liquidcrystal element also serves as an electrode constituting a part of thesensor element in the touch panel of one embodiment of the presentinvention; thus, the manufacturing process can be simplified and themanufacturing cost can be reduced. Furthermore, the touch panel can bemade thin and lightweight.

The common electrode 112 is electrically connected to the auxiliarywiring 119. By providing the auxiliary wiring 119, a resistance of theelectrodes of the sensor element can be reduced. As the resistance ofthe electrodes of the sensor element is reduced, the time constant ofthe electrode of the sensor element can be made small. When the timeconstant of the electrode of the sensor element is smaller, thedetection sensitivity can be increased, which enables an increase indetection accuracy.

For example, the time constant of the electrode of the sensor element isgreater than 0 seconds and less than or equal to 1×10⁻⁴ seconds,preferably greater than 0 seconds and less than or equal to 5×10⁻⁵seconds, further preferably greater than 0 seconds and less than orequal to 5×10⁻⁶ seconds, further preferably greater than 0 seconds andless than or equal to 5×10⁻⁷ seconds, and further preferably greaterthan 0 seconds and less than or equal to 2×10⁻⁷ seconds. In particular,when the time constant is smaller than or equal to 1×10⁻⁶ seconds, highdetection sensitivity can be achieved while the influence of noise isreduced.

The signal for driving a pixel and the signal for driving a sensorelement may be supplied to the touch panel 355C by one FPC. Thus, thetouch panel 355C can easily be incorporated into an electronic deviceand allows a reduction in the number of components.

Example of the operation method of the touch panel 355C and the like aredescribed below.

FIG. 31A is an equivalent circuit diagram of part of a pixel circuitprovided in the display portion 62 of the touch panel 355C.

Each pixel includes at least the transistor 206 and the liquid crystalelement 40. A gate of the transistor 206 is electrically connected to awiring 3501. One of a source and a drain of the transistor 206 iselectrically connected to a wiring 3502.

The pixel circuit includes a plurality of wirings extending in the Xdirection (e.g., a wiring 3510_1 and a wiring 3510_2) and a plurality ofwirings extending in the Y direction (e.g., a wiring 3511_1). They areprovided to intersect with each other, and capacitance is formedtherebetween.

Among the pixels provided in the pixel circuit, electrodes of the liquidcrystal elements of some pixels adjacent to each other are electricallyconnected to each other to form one block. The block is classified intotwo types: an island-shaped block (e.g., a block 3515_1 or a block3515_2), and a linear block extending in the X direction or the Ydirection (e.g., a block 3516 extending in the Y direction). Note thatonly part of the pixel circuit is illustrated in FIG. 31A, and inreality, these two types of blocks are repeatedly arranged in the Xdirection and the Y direction. An electrode on one side of the liquidcrystal element is, for example, a common electrode. An electrode on theother side of the liquid crystal element is, for example, a pixelelectrode.

The wiring 3510_1 (or the wiring 3510_2) extending in the X direction iselectrically connected to the island-shaped block 3515_1 (or the block3515_2). Although not illustrated, the wiring 3510_1 extending in the Xdirection is electrically connected to a plurality of the island-shapedblocks 3515_1 which are provided discontinuously along the X directionwith the linear blocks therebetween. Furthermore, the wiring 3511_1extending in the Y direction is electrically connected to the linearblock 3516.

FIG. 31B is an equivalent circuit diagram illustrating the connectionrelation between a plurality of wirings extending in the X direction(the wirings 3510_1 to 3510_6 are collectively called a wiring 3510 insome cases) and a plurality of wirings extending in the Y direction(wirings 3511_1 to 3511_6 are collectively called a wiring 3511 in somecases). A common potential can be input to each of the wirings 3510extending in the X direction and each of the wirings 3511 extending inthe Y direction. A pulse voltage can be input to each of the wirings3510 extending in the X direction from a pulse voltage output circuit.Furthermore, each of the wirings 3511 extending in the Y direction canbe electrically connected to the sensing circuit. Note that the wiring3510 and the wiring 3511 can be interchanged with each other.

An example of an operation method of the touch panel 355C is describedwith reference to FIGS. 32A and 32B.

Here, one frame period is divided into a writing period and a sensingperiod. The writing period is a period in which image data is written toa pixel, and the wirings 3501 (also referred to as gate lines or scanlines) are sequentially selected. The sensing period is a period inwhich sensing is performed by the sensor element.

FIG. 32A is an equivalent circuit diagram in the writing period. In thewiring period, a common potential is input to both the wiring 3510extending in the X direction and the wiring 3511 extending in the Ydirection.

FIG. 32B is an equivalent circuit diagram in the sensing period. In thesensing period, each of the wirings 3511 extending in the Y direction iselectrically connected to the detection circuit. Furthermore, a pulsevoltage is input to the wirings 3510 extending in the X direction from apulse voltage output circuit.

FIG. 32C illustrates an example of a timing chart of the input andoutput waveforms of a mutual capacitive sensor element.

In FIG. 32C, sensing of an object is performed in all rows and columnsin one frame period. FIG. 32C shows two cases in the sensing period: acase in which an object is not sensed (not touched) and a case in whichan object is sensed (touched).

A pulse voltage is supplied to the wirings 3510_1 to 3510_6 from thepulse voltage output circuit. When the pulse voltage is applied to thewirings 3510_1 to 3510_6, an electric field is generated between a pairof electrodes forming a capacitor, and current flows in the capacitor.The electric field generated between the electrodes is changed by beingblocked by the touch of a finger or a stylus, for example. That is, thecapacitance value of the capacitor is changed by touch or the like. Byutilizing this, an approach or contact of an object can be sensed.

The wirings 3511_1 to 3511_6 are connected to the detection circuit fordetecting the change in current in the wirings 3511_1 to 3511_6 causedby the change in capacitance value of the capacitor. The current valuedetected in the wirings 3511_1 to 3511_6 is not changed when there is noapproach or contact of an object, and is decreased when the capacitancevalue is decreased because of the approach or contact of an object. Inorder to detect a change in current, the total amount of current may bedetected. In that case, an integrator circuit or the like may be used todetect the total amount of current. Alternatively, the peak currentvalue may be detected. In that case, current may be converted intovoltage, and the peak voltage value may be detected.

Note that in FIG. 32C, the waveforms of the wirings 3511_1 to 3511_6show voltage values corresponding to the detected current values. Asillustrated in FIG. 32C, the timing of the display operation ispreferably in synchronization with the timing of the sensing operation.

The waveforms of the wirings 3511_1 to 3511_6 change in accordance withpulse voltages applied to the wirings 3510_1 to 3510_6. When there is noapproach or contact of an object, the waveforms of the wirings 3511_1 to3511_6 uniformly change in accordance with changes in the voltages ofthe wirings 3510_1 to 3510_6. On the other hand, the current value isdecreased at the point of approach or contact of an object andaccordingly the waveform of the voltage value changes.

By detecting a change in capacitance in this manner, the approach orcontact of an object can be detected. Even when an object such as afinger or a stylus does not touch but only approaches a touch panel, asignal may be detected in some cases.

Note that FIG. 32C illustrates an example in which a common potentialsupplied in the writing period is equal to a low potential supplied inthe sensing period in the wiring 3510; however, one embodiment of thepresent invention is not limited thereto. The common potential may bedifferent from the low potential.

It is preferable that, as an example, the pulse voltage output circuitand the detection circuit are formed in one IC. For example, the IC ispreferably mounted on a touch panel or a substrate in a housing of anelectronic device. In the case where the touch panel has flexibility,parasitic capacitance can potentially be increased in a bent portion ofthe touch panel, and the influence of noise can potentially beincreased. In view of this, an IC with a driving method less influencedby noise is preferably used. For example, it is preferable to use an ICto which a driving method capable of increasing a signal-noise ratio(S/N ratio) is applied.

It is preferable that a period in which an image is written and a periodin which sensing is performed by a sensor element are separatelyprovided as described above. Thus, a decrease in sensitivity of thesensor element caused by noise generated when data is written to a pixelcan be suppressed.

In one embodiment of the present invention, as illustrated in FIG. 32D,one frame period includes one writing period and one sensing period.Alternatively, as shown in FIG. 32E, two sensing periods may be includedin one frame period. When a plurality of detection periods are includedin one frame period, the detection sensitivity can be further increased.For example, two to four sensing periods may be included in one frameperiod.

Next, a structure example of the top surface of the sensor elementincluded in the touch panel 355C is described with reference to FIGS.33A to 33C.

FIG. 33A shows a top view of the sensor element. The sensor elementincludes a conductive layer 56 a and a conductive layer 56 b. Theconductive layer 56 a serves as one electrode of the sensor element, andthe conductive layer 56 b serves as the other electrode of the sensorelement. The sensor element can sense an approach or contact or the likeof an object utilizing the capacitance that is formed between theconductive layers 56 a and 56 b. Although not illustrated, theconductive layers 56 a and 56 b may have a top-surface shape that has acomb-like shape or that is provided with a slit.

In one embodiment of the present invention, the conductive layers 56 aand 56 b also serve as the common electrode of the liquid crystalelement.

A plurality of conductive layers 56 a are provided in the Y directionand extend in the X direction. A plurality of conductive layers 56 bprovided in the Y direction are electrically connected to each other viaa conductive layer 58 extending in the Y direction. FIG. 33A illustratesan example in which m conductive layers 56 a and n conductive layers 58are provided.

Note that the plurality of conductive layers 56 a may be provided in theX direction and in that case, may extend in the Y direction. Theplurality of conductive layers 56 b provided in the X direction may beelectrically connected to each other via the conductive layer 58extending in the X direction.

As illustrated in FIG. 33B, a conductive layer 56 serving as anelectrode of the sensor element is provided over a plurality of pixels60. The conductive layer 56 corresponds to each of the conductive layers56 a and 56 b in FIG. 33A. The pixel 60 is formed of a plurality ofsubpixels exhibiting different colors. FIG. 33B shows an example inwhich the pixel 60 is formed of three subpixels, subpixels 60 a, 60 b,and 60 c.

A pair of electrodes of the sensor element is preferably electricallyconnected to respective auxiliary wirings. The conductive layer 56 maybe electrically connected to an auxiliary wiring 57, as illustrated inFIG. 33C. Note that FIG. 33C illustrates an example in which theauxiliary wirings are stacked over the conductive layers; however, theconductive layers may be stacked over the auxiliary wirings. Theplurality of conductive layers 56 provided in the X direction may beelectrically connected to the conductive layer 58 through the auxiliarywiring 57.

The resistivity of the conductive layer that transmits visible light isrelatively high in some cases. Thus, the resistance of the pair ofelectrodes of the sensor element is preferably lowered by electricallyconnecting the pair of electrodes of the sensor element to the auxiliarywiring.

When the resistance of the pair of electrodes of the sensor element islowered, the time constant of the pair of electrodes can be small.Accordingly, the detection sensitivity of the sensor element can beincreased; furthermore, the detection accuracy of the sensor element canbe increased.

In the liquid crystal display device of one embodiment of the presentinvention, the low-resistance region of the semiconductor layer and thepixel electrode of the liquid crystal element are directly connected toeach other and positioned in the transmissive region or the reflectiveregion. In the liquid crystal display device of one embodiment of thepresent invention, at least one of the scan line and the signal line ispositioned in the reflective region. The contact area and at least oneof the scan line and the signal line can be provided in a portion of thedisplay device that contributes to display, whereby the aperture ratioof the display device can be increased. Furthermore, the display devicecan have high resolution.

This embodiment can be combined with any of other embodiments asappropriate.

Embodiment 2

In this embodiment, a semiconductor device is described. Specifically, atransistor that can be used for the display device of one embodiment ofthe present invention and a method for manufacturing the transistor isdescribed with reference to FIG. 34A to FIG. 43C.

2-1. Structure Example 1 of Transistor

FIGS. 34A to 34C each show an example of a transistor. The transistorillustrated in FIGS. 34A to 34C has a staggered (top-gate) structure.

FIG. 34A is a top view of a transistor 300. FIG. 34B is across-sectional view taken along dashed-dotted line X1-X2 in FIG. 34A.FIG. 34C is a cross-sectional view taken along dashed-dotted line Y1-Y2in FIG. 34A. For clarity, FIG. 34A does not illustrate some componentssuch as an insulating layer 310. As in FIG. 34A, some components are notillustrated in some cases in top views of transistors described below.Furthermore, the direction of dashed-dotted line X1-X2 may be referredto as a channel length (L) direction, and the direction of dashed-dottedline Y1-Y2 may be referred to as a channel width (W) direction.

The transistor 300 illustrated in FIGS. 34A to 34C includes aninsulating layer 304 over a substrate 302, an oxide semiconductor layer308 over the insulating layer 304, the insulating layer 310 over theoxide semiconductor layer 308, a conductive layer 312 over theinsulating layer 310, and an insulating layer 316 over the insulatinglayer 304, the oxide semiconductor layer 308, and the conductive layer312. The oxide semiconductor layer 308 includes a channel region 308 ithat overlaps with the conductive layer 312, a source region 308 s thatis in contact with the insulating layer 316, and a drain region 308 dthat is in contact with the insulating layer 316. The resistivity of thesource region 308 s is lower than that of the channel region 308 i. Theresistivity of the drain region 308 d is lower than that of the channelregion 308 i.

The insulating layer 316 contains nitrogen or hydrogen. The insulatinglayer 316 is in contact with the source region 308 s and the drainregion 308 d, so that nitrogen or hydrogen that is contained in theinsulating layer 316 is added to the source region 308 s and the drainregion 308 d. The carrier densities in the source region 308 s and thedrain region 308 d are higher when nitrogen or hydrogen is addedthereto.

The transistor 300 may further include an insulating layer 318 over theinsulating layer 316, a conductive layer 320 a electrically connected tothe source region 308 s through an opening portion 341 a provided in theinsulating layers 316 and 318, and a conductive layer 320 b electricallyconnected to the drain region 308 d through an opening portion 341 bprovided in the insulating layers 316 and 318.

The conductive layer 312 functions as a gate electrode, the conductivelayer 320 a functions as a source electrode, and the conductive layer320 b functions as a drain electrode.

The insulating layer 310 functions as a gate insulating layer. Theinsulating layer 310 includes an excess oxygen region. When theinsulating layer 310 includes the excess oxygen region, excess oxygencan be supplied to the channel region 308 i included in the oxidesemiconductor layer 308. A highly reliable semiconductor device can beprovided, as oxygen vacancies that can potentially be formed in thechannel region 308 i can be filled with excess oxygen.

To supply excess oxygen to the oxide semiconductor layer 308, excessoxygen may be supplied to the insulating layer 304 that is formed underthe oxide semiconductor layer 308. However, in this case, excess oxygencontained in the insulating layer 304 can potentially also be suppliedto the source region 308 s and the drain region 308 d included in theoxide semiconductor layer 308. When excess oxygen is supplied to thesource region 308 s and the drain region 308 d, the resistance of thesource region 308 s and the drain region 308 d can potentially beincreased.

In contrast, in the structure in which the insulating layer 310 formedover the oxide semiconductor layer 308 contains excess oxygen, excessoxygen can be selectively supplied only to the channel region 308 i.Alternatively, the carrier density of the source and drain regions 308 sand 308 d can selectively be increased after excess oxygen is suppliedto the channel region 308 i and the source and drain regions 308 s and308 d, in which case an increase in the resistance of the source anddrain regions 308 s and 308 d can be prevented.

Each of the source region 308 s and the drain region 308 d included inthe oxide semiconductor layer 308 preferably contains an element thatforms an oxygen vacancy or an element that is bonded to an oxygenvacancy. Typical examples of the element that forms an oxygen vacancy orthe element that is bonded to an oxygen vacancy include hydrogen, boron,carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, anda rare gas. Typical examples of the rare gas element include helium,neon, argon, krypton, and xenon. In the case where the insulating layer316 contains one or more of the elements that form an oxygen vacancy,such an element is diffused from the insulating layer 316 to the sourceregion 308 s and the drain region 308 d. In addition or alternatively,the element that forms an oxygen vacancy is added to the source region308 s and the drain region 308 d by impurity addition treatment.

When an impurity element is added to the oxide semiconductor layer, abond between a metal element and oxygen in the oxide semiconductor layeris cut, so that an oxygen vacancy is formed. Alternatively, when theimpurity element is added to the oxide semiconductor layer, oxygenbonded to a metal element in the oxide semiconductor layer is bonded tothe impurity element, and the oxygen is released from the metal element,whereby an oxygen vacancy is formed. As a result, the oxidesemiconductor layer has a higher carrier density and thus theconductivity thereof becomes higher.

Next, details of the components of the semiconductor device in FIGS. 34Ato 34C is described.

As the substrate 302, any of a variety of substrates can be used withoutparticular limitation. A material similar to the material used in thesubstrates 51 and 61 and described in Embodiment 1 and the like can beused as a material for the substrate 302.

The insulating layer 304 can be formed by a sputtering method, a CVDmethod, a vapor deposition method, a PLD method, a printing method, acoating method, or the like as appropriate. For example, the insulatinglayer 304 can be formed to have a single-layer structure or stackedstructure of an oxide insulator and/or a nitride insulator. Note that anoxide insulating layer is preferably used for at least a region of theinsulating layer 304 that is in contact with the oxide semiconductorlayer 308, in order to improve characteristics of the interface with theoxide semiconductor layer 308. When the insulating layer 304 is formedusing an oxide insulator that releases oxygen by heating, oxygencontained in the insulating layer 304 can be moved to the oxidesemiconductor layer 308 by heat treatment.

The thickness of the insulating layer 304 is greater than or equal to 50nm, greater than or equal to 100 nm and less than or equal to 3000 nm,or greater than or equal to 200 nm and less than or equal to 1000 nm.When the insulating layer 304 is thick, the amount of oxygen releasedfrom the insulating layer 304 can be increased, and the interface stateat the interface between the insulating layer 304 and the oxidesemiconductor layer 308 and oxygen vacancy included in the channelregion 308 i of the oxide semiconductor layer 308 can be reduced.

The insulating layer 304 can be formed with a single-layer structure ora stack structure using, for example, silicon oxide, silicon oxynitride,silicon nitride oxide, silicon nitride, aluminum oxide, hafnium oxide,gallium oxide, or a Ga—Zn oxide. In this embodiment, the insulatinglayer 304 has a stacked structure of a silicon nitride film and asilicon oxynitride film. With the insulating layer 304 having a stackedstructure including a silicon nitride film as a lower layer and asilicon oxynitride film as an upper layer, oxygen can be efficientlyintroduced into the oxide semiconductor layer 308.

The oxide semiconductor layer 308 can be formed using a material similarto that of the oxide semiconductor layer described in Embodiment 1.

The insulating layer 310 functions as a gate insulating layer of thetransistor 300. In addition, the insulating layer 310 has a function ofsupplying oxygen to the oxide semiconductor layer 308, particularly tothe channel region 308 i. For example, the insulating layer 310 can beformed with a single-layer structure or a stacked structure of an oxideinsulating layer or a nitride insulating layer. Note that at least anoxide insulating layer is used to form a region of the insulating layer310 in contact with the oxide semiconductor layer 308, to improve thecharacteristics of the interface between the oxide semiconductor layer308 and the insulating layer 310. Materials such as silicon oxide,silicon oxynitride, silicon nitride oxide, or silicon nitride can beused for the insulating layer 310.

The thickness of the insulating layer 310 can be greater than or equalto 5 nm and less than or equal to 400 nm, greater than or equal to 5 nmand less than or equal to 300 nm, or greater than or equal to 10 nm andless than or equal to 250 nm.

It is preferable that the insulating layer 310 have few defects andtypically have as few signals observed by electron spin resonance (ESR)spectroscopy as possible. Examples of the signals include a signal dueto an E′ center observed at a g-factor of 2.001. Note that the E′ centeris due to the dangling bond of silicon. As the insulating layer 310, asilicon oxide film or a silicon oxynitride film whose spin density of asignal due to the E′ center is lower than or equal to 3×10¹⁷ spins/cm³and preferably lower than or equal to 5×10¹⁶ spins/cm³ is suitable.

In addition to the signal described above, a signal originating fromnitrogen dioxide (NO₂) is observed in the insulating layer 310 in somecases. The signal is divided into three signals according to the Nnuclear spin; a first signal, a second signal, and a third signal. Thefirst signal is observed at a g-factor of greater than or equal to 2.037and less than or equal to 2.039. The second signal is observed at ag-factor of greater than or equal to 2.001 and less than or equal to2.003. The third signal is observed at a g-factor of greater than orequal to 1.964 and less than or equal to 1.966.

It is suitable to use an insulating film whose spin density of a signaldue to nitrogen dioxide (NO₂) is higher than or equal to 1×10¹⁷spins/cm³ and lower than 1×10¹⁸ spins/cm³ as the insulating layer 310,for example.

Note that a nitrogen oxide (NO_(x)) such as nitrogen dioxide (NO₂) formsa state in the insulating layer 310. The state is positioned in theenergy gap of the oxide semiconductor layer 308. Thus, when nitrogenoxide (NO_(x)) is diffused to the interface between the insulating layer310 and the oxide semiconductor layer 308, an electron can potentiallybe trapped by the level on the insulating layer 310 side. As a result,the trapped electrons remain in the vicinity of the interface betweenthe insulating layer 310 and the oxide semiconductor layer 308; thus,the threshold voltage of the transistor is shifted in the positivedirection. Therefore, a shift in the threshold voltage of the transistorcan be reduced when a film with a low nitrogen oxide content is used asthe insulating layer 310.

As an insulating layer that releases little nitrogen oxide (NO_(x)), forexample, a silicon oxynitride film can be used. The silicon oxynitridefilm is a film of which the amount of released ammonia is larger thanthe amount of released nitrogen oxide (NO_(x)) in thermal desorptionspectroscopy (TDS); the typical amount of released ammonia is greaterthan or equal to 1×10¹⁸/cm³ and less than or equal to 5×10¹⁹/cm³. Notethat the released amount of ammonia is the total amount of ammoniareleased by heat treatment in a range from 50° C. to 650° C. or a rangefrom 50° C. to 550° C. in TDS.

Since nitrogen oxide (NO_(x)) reacts with ammonia and oxygen in heattreatment, the use of an insulating film that releases a large amount ofammonia reduces nitrogen oxide (NO_(x)).

Note that the nitrogen concentration within the insulating layer 310,which is measured by secondary ion mass spectrometry (SIMS), ispreferably lower than or equal to 6×10²⁰ atoms/cm³.

Alternatively, the insulating layer 310 may be formed using a high-kmaterial such as hafnium silicate (HfSiO_(x)), hafnium silicate to whichnitrogen is added (HfSi_(x)O_(y)N_(z)), hafnium aluminate to whichnitrogen is added (HfAl_(x)O_(y)N_(z)), or hafnium oxide. The use ofsuch a high-k material enables a reduction in gate leakage current of atransistor.

The insulating layer 316 contains nitrogen or hydrogen. The insulatinglayer 316 may contain fluorine. As the insulating layer 316, forexample, a nitride insulating layer can be used. The nitride insulatinglayer can be formed using silicon nitride, silicon nitride oxide,silicon oxynitride, silicon nitride fluoride, silicon fluoronitride, orthe like. The hydrogen concentration in the insulating layer 316 ispreferably higher than or equal to 1×10²² atoms/cm³. The insulatinglayer 316 is in contact with the source region 308 s and the drainregion 308 d of the oxide semiconductor layer 308. Thus, theconcentration of an impurity (nitrogen or hydrogen) in the source region308 s and the drain region 308 d in contact with the insulating layer316 is increased, leading to an increase in the carrier density of thesource region 308 s and the drain region 308 d.

As the insulating layer 318, for example, an oxide insulating layer canbe used. Alternatively, a stack including an oxide insulating layer anda nitride insulating layer can be used as the insulating layer 318. Forthe insulating layer 318, silicon oxide, silicon oxynitride, siliconnitride oxide, aluminum oxide, hafnium oxide, gallium oxide, or a Ga—Znoxide can be used, for example.

The insulating layer 318 is preferably a film functioning as a barrierfilm against hydrogen, water, or the like from the outside.

The thickness of the insulating layer 318 can be greater than or equalto 30 nm and less than or equal to 500 nm, or greater than or equal to100 nm and less than or equal to 400 nm.

The conductive layers 312, 320 a and 320 b can be formed by a sputteringmethod, a vacuum evaporation method, a PLD method, a thermal CVD method,or the like. The conductive layers 312, 320 a and 320 b can be formedusing a material similar to that of the conductive layer described inEmbodiment 1.

Light-transmitting conductive materials such as ITO, indium oxidecontaining tungsten oxide, indium zinc oxide containing tungsten oxide,indium oxide containing titanium oxide, indium tin oxide containingtitanium oxide, indium zinc oxide, or ITSO can be used for theconductive layers 312, 320 a and 320 b. Furthermore, the conductivelayers 312, 320 a, and 320 b may have a stacked structure of thelight-transmitting conductive material and the metal element, both ofwhich are described above.

Note that an oxide semiconductor typified by an In—Ga—Zn oxide may beused for the conductive layer 312. The carrier density of the oxidesemiconductor becomes high when nitrogen or hydrogen is supplied fromthe insulating layer 316. In other words, the oxide semiconductorfunctions as an oxide conductor (OC). Accordingly, the oxidesemiconductor can be used for a gate electrode.

The conductive layer 312 can have, for example, a single-layer structureof an oxide conductor (OC), a single-layer structure of a metal film, ora stacked structure of an oxide conductor (OC) and a metal film.

Note that the use of a single-layer structure of a light-blocking metalfilm or a stacked structure of an oxide conductor (OC) and alight-blocking metal film is suitable for the conductive layer 312, asthe channel region 308 i formed under the conductive layer 312 can beshielded from light. In the case where the conductive layer 312 has astacked structure of an oxide semiconductor or an oxide conductor (OC)and a light-shielding metal film, formation of a metal film (e.g., atitanium film or a tungsten film) over the oxide semiconductor or theoxide conductor (OC) produces any of the following effects: theresistance of the oxide semiconductor or the oxide conductor (OC) isreduced by the diffusion of the constituent element of the metal film tothe oxide semiconductor or oxide conductor (OC) side, the resistance isreduced by damage (e.g., sputtering damage) during the deposition of themetal film, and the resistance is reduced when oxygen vacancies areformed by the diffusion of oxygen in the oxide semiconductor or theoxide conductor (OC) to the metal film.

The thickness of the conductive layers 312, 320 a and 320 b can begreater than or equal to 30 nm and less than or equal to 500 nm, orgreater than or equal to 100 nm and less than or equal to 400 nm.

2-2. Structure Example 2 of Transistor

Next, structures of a transistor different from that in FIGS. 34A to 34Care described with reference to FIGS. 35A to 35C.

FIG. 35A is a top view of a transistor 300A. FIG. 35B is across-sectional view taken along dashed-dotted line X1-X2 in FIG. 35A.FIG. 35C is a cross-sectional view taken along dashed-dotted line Y1-Y2in FIG. 35A.

The transistor 300A illustrated in FIGS. 35A to 35C includes anconductive layer 306 over the substrate 302, the insulating layer 304over the conductive layer 306, the oxide semiconductor layer 308 overthe insulating layer 304, the insulating layer 310 over the oxidesemiconductor layer 308, the conductive layer 312 over the insulatinglayer 310, and the insulating layer 316 over the insulating layer 304,the oxide semiconductor layer 308, and the conductive layer 312. Theoxide semiconductor layer 308 includes the channel region 308 i thatoverlaps with the conductive layer 312, the source region 308 s that isin contact with the insulating layer 316, and the drain region 308 dthat is in contact with the insulating layer 316. The resistivity of thesource region 308 s is lower than that of the channel region 308 i. Theresistivity of the drain region 308 d is lower than that of the channelregion 308 i.

The transistor 300A includes the conductive layer 306 and an openingportion 343 in addition to the components of the transistor 300described above.

The opening portion 343 is provided in the insulating layers 304 and310. The conductive layer 306 is electrically connected to theconductive layer 312 through the opening portion 343. Thus, theconductive layers 306 and 312 are supplied with the same potential. Notethat different potentials may be applied to the conductive layers 306and 312 without providing the opening portion 343. Alternatively, theconductive layer 306 may be used as a light-blocking layer withoutproviding the opening portion 343. For example, light irradiating thechannel region 308 i from the bottom can be reduced by forming theconductive layer 306 with a light-blocking material.

In addition, when the structure of the transistor 300A is used, theconductive layer 306 serves as a first gate electrode (also referred toas a bottom-gate electrode), and the conductive layer 312 serves as asecond gate electrode (also referred to as a top-gate electrode).Furthermore, the insulating layer 304 serves as a first gate insulatinglayer, and the insulating layer 310 serves as a second gate insulatinglayer.

A material similar to that of the conductive layers 312, 320 a, and 320b described above can be used for the conductive layer 306. Inparticular, the conductive layer 306 is preferably formed with amaterial containing copper, as the use of such a material allows areduction in resistivity. For example, each of the conductive layers306, 320 a, and 320 b preferably has a stacked structure in which acopper film is provided over a titanium nitride film, a tantalum nitridefilm, or a tungsten film. In this case, parasitic capacitance generatedbetween the conductive layer 306 and the conductive layer 320 a andparasitic capacitance generated between the conductive layer 306 and theconductive layer 320 b can be reduced by using the transistor 300A as apixel transistor and/or a driving transistor of a display device. Thus,the conductive layers 306, 320 a, and 320 b can be used not only as thefirst gate electrode, the source electrode, and the drain electrode ofthe transistor 300A, but also as power source supply wirings, signalsupply wirings, connection wirings, or the like of the display device.

In this manner, unlike the transistor 300 described above, thetransistor 300A in FIGS. 35A to 35C has a structure in which aconductive layer functioning as a gate electrode is provided over andunder the oxide semiconductor layer 308. As in the transistor 300A, thesemiconductor device of one embodiment of the present invention may havea plurality of gate electrodes.

As illustrated in FIG. 35C, the oxide semiconductor layer 308 faces theconductive layers 306 and 312 that functions as first and secondelectrodes, respectively. The oxide semiconductor layer 308 issandwiched between the conductive films that function as the two gateelectrodes.

Furthermore, the length of the conductive layer 312 in the channel widthdirection is longer than the length of the oxide semiconductor layer 308in the channel width direction. In the channel width direction, theentire oxide semiconductor layer 308 is covered with the conductivelayer 312 with the insulating layer 310 placed therebetween. Since theconductive layer 312 is connected to the conductive layer 306 throughthe opening portion 343 provided in the insulating layers 304 and 310, aside surface of the oxide semiconductor layer 308 in the channel widthdirection faces the conductive layer 312 with the insulating layer 310placed therebetween.

In other words, in the channel width direction of the transistor 300A,the conductive layers 306 and 312 are connected to each other throughthe opening portion 343 provided in the insulating layers 304 and 310,and the conductive layers 306 and 312 surround the oxide semiconductorlayer 308 with the insulating layers 304 and 310 placed therebetween.

Such a structure enables the oxide semiconductor layer 308 included inthe transistor 300A to be electrically surrounded by electric fields ofthe conductive layer 306 functioning as a first gate electrode and theconductive layer 312 functioning as a second gate electrode. A devicestructure of a transistor, like that of the transistor 300A, in whichelectric fields of a first gate electrode and a second gate electrodeelectrically surround the oxide semiconductor layer 308 in which achannel region is formed, can be referred to as a surrounded channel(S-channel) structure.

Since the transistor 300A has the S-channel structure, an electric fieldfor inducing a channel can be effectively applied to the oxidesemiconductor layer 308 by the conductive layer 306 or the conductivelayer 312; thus, the current drive capability of the transistor 300A canbe improved and high on-state current characteristics can be obtained.Since the on-state current can be increased, a size reduction of thetransistor 300A is possible. Furthermore, since the transistor 300A hasa structure in which the oxide semiconductor layer 308 is surrounded bythe conductive layer 306 and the conductive layer 312, the mechanicalstrength of the transistor 300A can be increased.

When seen in the channel width direction of the transistor 300A, anopening portion different from the opening portion 343 may be formed onthe oxide semiconductor layer 308 side in which the opening portion 343is not formed.

When a transistor has a pair of gate electrodes between which asemiconductor film is positioned as in the transistor 300A, one of thegate electrodes may be supplied with a signal A and the other gateelectrode may be supplied with a fixed potential Vb. Alternatively, oneof the gate electrodes may be supplied with the signal A and the othergate electrode may be supplied with a signal B. Alternatively, one ofthe gate electrodes may be supplied with a fixed potential Va and theother gate electrode may be supplied with the fixed potential Vb.

The signal A is, for example, a signal for controlling the on/off state.The signal A may be a digital signal with two kinds of potentials, apotential V1 and a potential V2 (V1>V2). For example, the potential V1can be a high power supply potential, and the potential V2 can be a lowpower supply potential. The signal A may be an analog signal.

The fixed potential Vb is, for example, a potential for controlling athreshold voltage VthA of the transistor. The fixed potential Vb may bethe potential V1 or the potential V2. In that case, a potentialgenerator circuit for generating the fixed potential Vb is notnecessary, which is preferable. The fixed potential Vb may be differentfrom the potential V1 or the potential V2. When the fixed potential Vbis low, the threshold voltage VthA can be high in some cases. As aresult, drain current generated when gate-source voltage Vgs is 0 V canbe reduced and leakage current in the circuit including the transistorcan be reduced in some cases. The fixed potential Vb may be, forexample, lower than the low power supply potential. On the other hand,in some cases, the threshold voltage VthA can be low by setting thefixed potential Vb high. As a result, drain current generated when thegate-source voltage Vgs is a high power supply potential can beincreased and the operating speed of the circuit including thetransistor can be improved in some cases. The fixed potential Vb may be,for example, higher than the low power supply potential.

The signal B is, for example, a signal for controlling the on/off state.The signal B may be a digital signal with two kinds of potentials, apotential V3 and a potential V4 (V3>V4). For example, the potential V3can be a high power supply potential, and the potential V4 can be a lowpower supply potential. The signal B may be an analog signal.

When both the signal A and the signal B are digital signals, the signalB may have the same digital value as the signal A. In this case, it maybe possible to increase the on-state current of the transistor and theoperating speed of the circuit including the transistor. Here, thepotential V1 and the potential V2 of the signal A may be different fromthe potential V3 and the potential V4 of the signal B. For example, if agate insulating layer for the gate to which the signal B is input isthicker than a gate insulating layer for the gate to which the signal Ais input, the potential amplitude of the signal B (V3-V4) may be largerthan the potential amplitude of the signal A (V1-V2). In this manner,the influence of the signal A and that of the signal B on the on/offstate of the transistor can be substantially the same in some cases.

When both the signal A and the signal B are digital signals, the signalB may have a digital value different from that of the signal A. In thiscase, the signal A and the signal B can separately control thetransistor, and thus, higher performance can be achieved. The transistorwhich is, for example, an n-channel transistor, can function by itselfas a NAND circuit, a NOR circuit, or the like in the following case: thetransistor is turned on only when the signal A has the potential V1 andthe signal B has the potential V3, or the transistor is turned off onlywhen the signal A has the potential V2 and the signal B has thepotential V4. The signal B may be a signal for controlling the thresholdvoltage VthA. For example, the potential of the signal B in a period inwhich the circuit including the transistor operates may be differentfrom the potential of the signal B in a period in which the circuit doesnot operate. The potential of the signal B may vary depending on theoperation mode of the circuit. In this case, the potential of the signalB is not necessarily changed as frequently as the potential of thesignal A.

When both the signal A and the signal B are analog signals, the signal Bmay be an analog signal having the same potential as the signal A, ananalog signal having a potential of the signal A multiplied by aconstant, an analog signal whose potential is higher or lower than thepotential of the signal A by a constant, or the like. In this case, itmay be possible to increase the on-state current of the transistor andthe operating speed of the circuit including the transistor. The signalB may be an analog signal different from the signal A. In this case, thesignal A and the signal B can separately control the transistor, andthus, higher performance can be achieved.

The signal A may be a digital signal, and the signal B may be an analogsignal. Alternatively, the signal A may be an analog signal, and thesignal B may be a digital signal.

When both of the gate electrodes of the transistor are supplied with thefixed potentials, the transistor can function as an element equivalentto a resistor in some cases. For example, in the case where thetransistor is an n-channel transistor, the effective resistance of thetransistor can be sometimes low (high) when the fixed potential Va orthe fixed potential Vb is high (low). When both the fixed potential Vaand the fixed potential Vb are high (low), the effective resistance canbe lower (higher) than that of a transistor with only one gate in somecases.

Note that the other components of the transistor 300A are similar tothose of the transistor 300 described above, and an effect similar tothat of the transistor 300 can be obtained.

2-3. Structure Example 3 of Transistor

Next, a structure example different from that of the transistor in FIGS.35A to 35C are described with reference to FIGS. 36A and 36B, and FIGS.37A and 37B.

FIGS. 36A and 36B are cross-sectional views of a transistor 300B, andFIGS. 37A and 37B are cross-sectional views of a transistor 300C. Notethat the top views of the transistors 300B and 300C are not drawn here,as they are similar to the top view of the transistor 300A shown in FIG.35A.

The transistor 300B illustrated in FIGS. 36A and 36B are different fromthe transistor 300A described above in terms of the shapes of theinsulating layer 310 and the conductive layer 312. Specifically, in thecross section of the transistor in the channel length (L) direction, theshape of the insulating layer 310 and the conductive layer 312 is arectangle in the transistor 300A, but is a tapered shape in thetransistor 300B. More specifically, in the cross section of thetransistor 300A in the channel length (L) direction, the top edge of theconductive layer 312 and the bottom edge of the insulating layer 310 areformed substantially in the same location. In contrast, in the crosssection of the transistor 300B in the channel length (L) direction, atop edge of the conductive layer 312 is formed in a location more inwardfrom the bottom edge of the insulating layer 310. In other words, theside edges of the insulating layer 310 are positioned more outwardcompared with the side edges of the conductive layer 312.

The transistor 300A can be formed by processing the conductive layer 312and the insulating layer 310 in one step, using the same mask and a dryetching method. The transistor 300B can be formed by processing theconductive layer 312 and the insulating layer 310 using the same mask,and a combination of a wet etching method and a dry etching method.

A structure like that of the transistor 300A is preferable because edgesof the source region 308 s and the drain region 308 d can besubstantially aligned with edges of the conductive layer 312. Incontrast, a structure like that of the transistor 300B is preferablebecause the coverage with the insulating layer 316 improves.

The transistor 300C illustrated in FIGS. 37A and 37B is different fromthe transistor 300A described above in the shape of the conductive layer312 and the insulating layer 310. Specifically, in the cross section ofthe transistor 300C in the channel length (L) direction, a bottom edgeof the conductive layer 312 is not aligned with the top edge of theinsulating layer 310. The bottom edge of the conductive layer 312 isformed more inward from the top edge of the insulating layer 310.

For example, the structure of the transistor 300C can be obtained in thefollowing manner: the conductive layer 312 and the insulating layer 310are processed with a wet etching method and a dry etching method,respectively, using the same mask.

With the structure of the transistor 300C, regions 308 f are formed inthe oxide semiconductor layer 308 in some cases. The regions 308 f areformed between the channel region 308 i and the source region 308 s andbetween the channel region 308 i and the drain region 308 d.

The regions 308 f function as high-resistance regions or low-resistanceregions. The high-resistance regions have the same level of resistanceas the channel region 308 i and do not overlap with the conductive layer312 functioning as a gate electrode. In the case where the regions 308 fare high-resistance regions, the regions 308 f function as offsetregions. To suppress a decrease in the on-state current of thetransistor 300C, the regions 308 f functioning as offset regions mayeach have a length of 1 μm or less in a cross section in the channellength (L) direction.

When the regions 308 f are low-resistance regions, the regions 308 fhave a resistance that is lower than that of the channel region 308 iand higher than that of the source region 308 s and the drain region 308d. When the regions 308 f are low-resistance regions, the regions 308 ffunction as lightly doped drain (LDD) regions. The regions 308 ffunctioning as LDD regions can alleviate an electric field in the drainregion, thereby reducing a change in the threshold voltage of thetransistor due to the electric field in the drain region.

Note that in the case where the regions 308 f serve as LDD regions, forexample, the regions 308 f are formed by supplying nitrogen or hydrogenfrom the insulating layer 316 to the regions 308 f or by adding animpurity element from above the conductive layer 312 and the insulatinglayer 310 using the conductive layer 312 and the insulating layer 310 asa mask so that the impurity element is added to the oxide semiconductorlayer 308 through the insulating layer 310.

2-4. Fabrication Method Example 1 of Transistor

Next, an example of a fabrication method of the transistor 300illustrated in FIGS. 34A to 34C is described in reference to FIGS. 38Ato 38D, FIGS. 39A to 39C, and FIGS. 40A and 40B. Note that FIGS. 38A to38D, FIGS. 39A to 39C, and FIGS. 40A and 40B are cross-sectional viewsin the channel length (L) direction and the channel width (W) directionthat illustrate a method for fabricating the transistor 300.

First, the insulating layer 304 is formed over the substrate 302. Then,an oxide semiconductor layer is formed over the insulating layer 304.Subsequently, an oxide semiconductor layer 307 is formed by processingthe oxide semiconductor layer into a shape of an island (FIG. 38A).

The insulating layer 304 can be formed by a sputtering method, a CVDmethod, a vapor deposition method, a PLD method, a printing method, acoating method, or the like as appropriate. In this embodiment, as theinsulating layer 304, a 400-nm-thick silicon nitride film and a50-nm-thick silicon oxynitride film are formed with a plasma CVDapparatus. Note that the oxide semiconductor layer 308 may be formedover the substrate 302 without forming the insulating layer 304.

After the insulating layer 304 is formed, oxygen may be added to theinsulating layer 304. Examples of oxygen that can be added to theinsulating film include an oxygen radical, an oxygen atom, an oxygenatomic ion, and an oxygen molecular ion. Examples of a method for addingthe oxygen include an ion doping method, an ion implantation method, andplasma treatment method. Alternatively, a film that suppresses oxygenrelease may be formed over the insulating layer 304, and then, oxygenmay be added to the insulating layer 304 through the film.

The film that suppresses oxygen release can be formed using a conductivefilm or a semiconductor film containing one or more of indium, zinc,gallium, tin, aluminum, chromium, tantalum, titanium, molybdenum,nickel, iron, cobalt, and tungsten.

In the case where oxygen is added by plasma treatment in which oxygen isexcited by a microwave to generate high-density oxygen plasma, theamount of oxygen added to the insulating layer 304 can be increased.

The oxide semiconductor layer 307 can be formed by a sputtering method,a coating method, a pulsed laser deposition method, a laser ablationmethod, a thermal CVD method, or the like. Note that the oxidesemiconductor film can be processed into the oxide semiconductor layer307 in the following manner: a mask is formed over the oxidesemiconductor film by a lithography process, and then, the oxidesemiconductor film is partly etched using the mask. Alternatively, theisolated oxide semiconductor layer 307 may be directly formed by aprinting method.

As a power supply device for generating plasma when the oxidesemiconductor layer is formed by a sputtering method, an RF power supplydevice, an AC power supply device, a DC power supply device, or the likecan be used as appropriate. As a sputtering gas for forming the oxidesemiconductor layer, a rare gas (typically argon), oxygen, or a mixedgas of a rare gas and oxygen is used as appropriate. In the case of themixed gas of a rare gas and oxygen, the proportion of oxygen to a raregas is preferably increased.

To increase the crystallinity of the oxide semiconductor layer formed bya sputtering method, for example, the oxide semiconductor is preferablydeposited at a substrate temperature higher than or equal to 150° C. andlower than or equal to 750° C., higher than or equal to 150° C. andlower than or equal to 450° C., or higher than or equal to 200° C. andlower than or equal to 350° C.

In this embodiment, as the oxide semiconductor layer 307, a 35-nm-thickoxide semiconductor layer is deposited with a sputtering apparatus usingan In—Ga—Zn metal oxide (In:Ga:Zn=4:2:4.1 [atomic ratio]) as asputtering target.

After the oxide semiconductor layer 307 is formed, the oxidesemiconductor layer 307 may be dehydrated or dehydrogenated by heattreatment. The temperature of the heat treatment is typically higherthan or equal to 150° C. and lower than the strain point of thesubstrate, higher than or equal to 250° C. and lower than or equal to450° C., or higher than or equal to 300° C. and lower than or equal to450° C.

The heat treatment can be performed in an inert gas atmospherecontaining nitrogen or a rare gas such as helium, neon, argon, xenon, orkrypton. Furthermore, the heat treatment may be performed in an inertgas atmosphere first, and then in an oxygen atmosphere. It is preferablethat the above inert gas atmosphere and the above oxygen atmosphere donot contain hydrogen, water, and the like. The treatment time can belonger than or equal to 3 minutes and shorter than or equal to 24 hours.

An electric furnace, an RTA apparatus, or the like can be used for theheat treatment. The use of an RTA apparatus allows the heat treatment tobe performed at a temperature higher than or equal to the strain pointof the substrate if the heating time is short. Therefore, the heattreatment time can be shortened.

By depositing the oxide semiconductor film while it is heated or byperforming heat treatment after the formation of the oxide semiconductorfilm, the hydrogen concentration in the oxide semiconductor layer, whichis measured by SIMS, can be lower than or equal to 5×10¹⁹ atoms/cm³,lower than or equal to 1×10¹⁹ atoms/cm³, lower than or equal to 5×10¹⁸atoms/cm³, lower than or equal to 1×10¹⁸ atoms/cm³, lower than or equalto 5×10¹⁷ atoms/cm³, or lower than or equal to 1×10¹⁶ atoms/cm³.

Next, an insulating layer 310_0 is formed over the insulating layer 304and the oxide semiconductor layer 307 (FIG. 38B).

For the insulating layer 310_0, a silicon oxide film or a siliconoxynitride film can be formed with a plasma-enhanced chemical vapordeposition apparatus (a PECVD apparatus or simply referred to as aplasma CVD apparatus). In this case, a deposition gas including siliconand an oxidizing gas are preferably used as a source gas. Typicalexamples of the deposition gas containing silicon include silane,disilane, trisilane, and silane fluoride. Examples of the oxidizing gasinclude oxygen, ozone, dinitrogen monoxide, and nitrogen dioxide.

A silicon oxynitride film having few defects can be formed as theinsulating layer 310_0 with the plasma CVD apparatus under theconditions that the flow rate of the oxidizing gas is more than 20 timesand less than 100 times or preferably more than or equal to 40 times andless than or equal to 80 times the flow rate of the deposition gas andthat the pressure in a treatment chamber is lower than 100 Pa or lowerthan or equal to 50 Pa.

A silicon oxide film or a silicon oxynitride film that is dense can beformed as the insulating layer 310_0 under the following conditions: thesubstrate placed in a treatment chamber of a plasma CVD apparatus thatis vacuum-evacuated is held at a temperature higher than or equal to280° C. and lower than or equal to 400° C., the pressure in thetreatment chamber is greater than or equal to 20 Pa and less than orequal to 250 Pa, preferably greater than or equal to 100 Pa and lessthan or equal to 250 Pa with introduction of a source gas into thetreatment chamber, and a high-frequency power is supplied to anelectrode provided in the treatment chamber.

The insulating layer 310_0 may be formed by a plasma CVD method using amicrowave. A microwave refers to a wave in the frequency range of 300MHz to 300 GHz. In a microwave, electron temperature and electron energyare low. Furthermore, in supplied power, the proportion of power usedfor acceleration of electrons is low, and therefore, power can be usedfor dissociation and ionization of more molecules. Thus, plasma withhigh density (high-density plasma) can be excited. Therefore, adeposition surface and a deposit are less damaged by plasma, and theinsulating layer 310_0 with few defects can be formed.

Alternatively, the insulating layer 310_0 can also be formed by a CVDmethod using an organosilane gas. As the organosilane gas, any of thefollowing silicon-containing compound can be used: tetraethylorthosilicate (TEOS) (chemical formula: Si(OC₂H₅)₄); tetramethylsilane(TMS) (chemical formula: Si(CH₃)₄); tetramethylcyclotetrasiloxane(TMCTS); octamethylcyclotetrasiloxane (OMCTS); hexamethyldisilazane(HMDS); triethoxysilane (SiH(OC₂H₅)₃); trisdimethylaminosilane(SiH(N(CH₃)₂)₃); or the like. By a CVD method using the organosilanegas, the insulating layer 310_0 having high coverage can be formed.

In this embodiment, as the insulating layer 310_0, a 100-nm-thicksilicon oxynitride film is formed with the plasma CVD apparatus.

Next, a conductive layer 312_0 is formed over the insulating layer 310_0(FIG. 38C).

In the case where a metal oxide film is used as the conductive layer312_0, for example, oxygen can potentially be added from the conductivelayer 312_0 to the insulating layer 310_0 during the formation of theconductive layer 312_0. In FIG. 38C, oxygen added to the insulatinglayer 310_0 is schematically shown by arrows.

In the case where a metal oxide film is used as the conductive layer312_0, the conductive layer 312_0 is preferably formed by a sputteringmethod in an atmosphere containing an oxygen gas. Formation of theconductive layer 312_0 in an atmosphere containing an oxygen gas allowssuitable addition of oxygen to the insulating layer 310_0. Note that amethod for forming the conductive layer 312_0 is not limited to asputtering method, and other methods such as an ALD method may be used.

In this embodiment, a 100-nm-thick IGZO film containing an In—Ga—Znoxide (In:Ga:Zn=4:2:4.1 [atomic ratio]) is formed as the conductivelayer 312_0 by a sputtering method. Note that oxygen addition treatmentmay be performed on the insulating layer 310_0 before or after theformation of the conductive layer 312_0. The oxygen addition treatmentcan be performed with a method similar to the oxygen addition that canbe performed after the formation of the insulating layer 304.

Next, a mask 340 is formed by a lithography process in a desiredposition over the conductive layer 312_0 (FIG. 38D).

Next, etching is performed from above the mask 340 to process theconductive layer 312_0 and the insulating layer 310_0. Then, the mask340 is removed, so that the island-shaped conductive layer 312 and theisland-shaped insulating layer 310 are formed (FIG. 39A).

In this embodiment, the conductive film 312_0 and the insulating film310_0 are processed by a dry etching method.

In the processing of the conductive layer 312_0 and the insulating layer310_0, the thickness of the oxide semiconductor layer 307 in a regionnot overlapping with the conductive layer 312 is decreased in somecases. In the processing of the conductive layer 312_0 and theinsulating layer 310_0, the thickness of the insulating layer 304 in aregion not overlapping with the oxide semiconductor layer 307 isdecreased in some cases. In the processing of the conductive layer 312_0and the insulating layer 310_0, an etchant or an etching gas (e.g.,chlorine) can be added to the oxide semiconductor layer 307, or theconstituent element of the conductive layer 312_0 or the insulatinglayer 310_0 can be added to the oxide semiconductor layer 307 in somecases.

Next, the insulating layer 316 is formed over the insulating layer 304,the oxide semiconductor layer 307, and the conductive layer 312. Notethat the oxide semiconductor layer 307 is in contact with the insulatinglayer 316 by formation of the insulating layer 316 and serves as thesource region 308 s and the drain region 308 d. The oxide semiconductorlayer 307 in a region in contact with the insulating layer 310 becomesthe channel region 308 i. Accordingly, the oxide semiconductor layer 308including the channel region 308 i, the source region 308 s, and thedrain region 308 d is formed (FIG. 39B).

When a silicon nitride oxide film is used for the insulating layer 316,nitrogen or hydrogen in the silicon nitride oxide film can be suppliedto the source region 308 s and the drain region 308 d in contact withthe insulating layer 316.

Note that an impurity element may be added to the oxide semiconductorlayer 307 before the insulating layer 316 is formed. Alternatively, animpurity element may be added to the oxide semiconductor layer 307through the insulating layer 316 after the insulating layer 316 isformed.

The impurity element can be added by an ion doping method, an ionimplantation method, a plasma treatment method, or the like. In a plasmatreatment method, an impurity element can be added using plasmagenerated in a gas atmosphere containing the impurity element. A dryetching apparatus, an ashing apparatus, a plasma CVD apparatus, ahigh-density plasma CVD apparatus, or the like can be used to generatethe plasma.

As a source gas of the impurity element, at least one of B₂H₆, PH₃, CH₄,N₂, NH₃, AlH₃, AlCl₃, SiH₄, Si₂H₆, F₂, HF, H₂, and a rare gas can beused. Alternatively, at least one of B₂H₆, PH₃, N₂, NH₃, AlH₃, AlCl₃,F₂, HF, and H₂ which are diluted with a rare gas can be used. Typicalexamples of the rare gas element include helium, neon, argon, krypton,and xenon.

Alternatively, after a rare gas is added to the oxide semiconductorlayer 307, at least one of B₂H₆, PH₃, CH₄, N₂, NH₃, AlH₃, AlCl₃, SiH₄,Si₂H₆, F₂, HF, and H₂ may be added thereto. Alternatively, after atleast one of B₂H₆, PH₃, CH₄, N₂, NH₃, AlH₃, AlCl₃, SiH₄, Si₂H₆, F₂, HF,and H₂ is added to the oxide semiconductor layer 307, a rare gas may beadded thereto.

Next, the insulating layer 318 is formed over the insulating layer 316(FIG. 39C).

Note that the insulating layer 318 can be formed using a materialselected from the materials described above. In this embodiment, as theinsulating layer 318, a 300-nm-thick silicon oxynitride film is formedwith a plasma CVD apparatus.

Subsequently, a mask is formed by lithography in a desired position overthe insulating layer 318, and then, the insulating layer 318 and theinsulating layer 316 are partly etched, so that the opening portion 341a that reaches the source region 308 s and the opening portion 341 bthat reaches the drain region 308 d are formed (FIG. 40A).

For the etching of the insulating layers 318 and 316, at least one of awet etching method and a dry etching method can be used. In thisembodiment, a dry etching method is used to process the insulatinglayers 318 and 316.

Next, a conductive layer is formed over the source region 308 s, thedrain region 308 d, and the insulating layer 318 so as to cover theopening portions 341 a and 341 b and the conductive layer is processedinto a desired shape, whereby the conductive layers 320 a and 320 b areformed (FIG. 40B).

The conductive layers 320 a and 320 b can be formed using a materialselected from the materials described above. In this embodiment, asputtering apparatus is used to form a stack including a 50-nm-thicktungsten film and a 400-nm-thick copper film, as the conductive layers320 a and 320 b.

For the processing of the conductive layer that serves as the conductivelayers 320 a and 320 b, at least one of a wet etching method and a dryetching method can be used. In this embodiment, in the processing of theconductive layer into the conductive layers 320 a and 320 b, the copperfilm is etched by a wet etching method and then the tungsten film isetched by a dry etching method.

Through the process described above, the transistor 300 illustrated inFIGS. 34A to 34C can be fabricated.

2-5. Fabrication Method Example 2 of Transistor

Next, an example of a fabrication method of the transistor 300Aillustrated in FIGS. 35A to 35C is described in reference to FIGS. 41Ato 41D, FIGS. 42A to 42C, and FIGS. 43A to 43C. Note that FIGS. 41A to41D, FIGS. 42A to 42C, and FIGS. 43A to 43C are cross-sectional views inthe channel length (L) direction and the channel width (W) directionthat illustrate a method for fabricating the transistor 300A.

First, the conductive layer 306 is formed over the substrate 302. Next,the insulating layer 304 is formed over the substrate 302 and theconductive layer 306, and an oxide semiconductor layer is formed overthe insulating layer 304. Subsequently, the oxide semiconductor layer isprocessed into an island shape to form the oxide semiconductor layer 307(FIG. 41A).

The conductive layer 306 can be formed with similar materials andmethods as the conductive layers 320 a and 320 b. In this embodiment, asthe conductive layer 306, a stack including a 50-nm-thick tantalumnitride film and a 100-nm-thick copper film is formed by a sputteringmethod.

Next, the insulating layer 310_0 is formed over the insulating layer 304and the oxide semiconductor layer 307 (FIG. 41B).

Next, a mask is formed by lithography in a desired position over theinsulating layer 310_0, and then, the insulating layers 310_0 and 304are partly etched, so that the opening portion 343 that reaches theconductive layer 306 is formed (FIG. 41C).

As the method for forming the opening portion 343, at least one of a wetetching method and a dry etching method can be used. In this embodiment,the opening portion 343 is formed by a dry etching method.

Next, the conductive layer 312_0 is formed over the conductive layer 306and the insulating layer 310_0 to cover the opening portion 343 (FIG.41D).

In the case where a metal oxide film is used as the conductive layer312_0, for example, oxygen can potentially be added from the conductivelayer 312_0 to the insulating layer 310_0 during the formation of theconductive layer 312_0. In FIG. 41D, oxygen added to the insulatinglayer 310_0 is schematically shown by arrows.

When the conductive layer 312_0 is formed to cover the opening portion343, the conductive layers 306 and 312_0 are electrically connected.

Subsequently, the mask 340 is formed by a lithography process in adesired position over the conductive layer 312_0 (FIG. 42A).

Next, etching is performed from above the mask 340 to process theconductive film 312_0 and the insulating film 310_0. Furthermore, theconductive layer 312_0 and the insulating layer 310_0 are processed, andthen the mask 340 is removed. By processing the conductive layer 312_0and the insulating layer 310_0, the island-shaped conductive layer 312and the island-shaped insulating layer 310 are formed (FIG. 42B).

In this embodiment, a dry etching method is used to process theconductive layer 312_0 and the insulating layer 310_0.

Next, the insulating layer 316 is formed over the insulating layer 304,the oxide semiconductor layer 307, and the conductive layer 312. Notethat the oxide semiconductor layer 307 is in contact with the insulatinglayer 316 by formation of the insulating layer 316 and serves as thesource region 308 s and the drain region 308 d. The oxide semiconductorlayer 307 in a region in contact with the insulating layer 310 becomesthe channel region 308 i. Accordingly, the oxide semiconductor layer 308including the channel region 308 i, the source region 308 s, and thedrain region 308 d is formed (FIG. 42C).

Note that the insulating layer 316 can be formed using a materialselected from the materials described above. In this embodiment, as theinsulating layer 316, a 100-nm-thick silicon nitride oxide film isformed with a plasma CVD apparatus. In the formation of the siliconnitride oxide film, plasma treatment and film formation treatment areperformed at 220° C. Note that the plasma treatment and the depositiontreatment can be performed in the same manner described above.

Next, the insulating layer 318 is formed over the insulating layer 316(FIG. 43A).

Subsequently, a mask is formed by lithography in a desired position overthe insulating layer 318, and then, the insulating layers 318 and 316are partly etched, so that the opening portion 341 a reaching the sourceregion 308 s and the opening portion 341 b reaching the drain region 308d are formed (FIG. 43B).

Next, a conductive layer is formed over the source region 308 s, thedrain region 308 d, and the insulating layer 318 so as to cover theopening portions 341 a and 341 b, and the conductive layer is processedinto a desired shape, whereby the conductive layers 320 a and 320 b areformed (FIG. 43C).

Through the steps described above, the transistor 300A illustrated inFIGS. 35A to 35C can be fabricated.

This embodiment can be combined with any of other embodiments asappropriate.

Embodiment 3

In this embodiment, a touch panel module and electronic devices thatinclude the input/output device of one embodiment of the presentinvention are described with reference to FIG. 44, FIGS. 45A to 45H, andFIGS. 46A and 46B.

In a touch panel module 8000 illustrated in FIG. 44, a touch panel 8004connected to an FPC 8003, a frame 8009, a printed circuit board 8010,and a battery 8011 are provided between a top cover 8001 and a bottomcover 8002.

The display device of one embodiment of the present invention can beused for the touch panel 8004, for example.

The shapes and sizes of the top cover 8001 and the bottom cover 8002 canbe changed as appropriate in accordance with the size of the touch panel8004.

The display device of one embodiment of the present invention canfunction as a touch panel. The touch panel 8004 can be a resistive touchpanel or a capacitive touch panel and can be formed to overlap with thedisplay device of one embodiment of the present invention. A countersubstrate (sealing substrate) of the touch panel 8004 can have a touchpanel function. A photo sensor may be provided in each pixel of thetouch panel 8004 so that an optical touch panel can be obtained.

When a transmissive liquid crystal element is used, a backlight 8007 maybe provided as illustrated in FIG. 44. The backlight 8007 includes alight source 8008. Although the light sources 8008 are provided over thebacklight 8007 in FIG. 44, one embodiment of the present invention isnot limited to this structure. For example, a structure in which thelight source 8008 is provided at an end portion of the backlight 8007and a light diffusion plate is further provided may be employed. In thecase where a self-luminous light-emitting element such as an organic ELelement is used or the case where a reflective panel or the like isused, the backlight 8007 is not necessarily provided.

The frame 8009 protects the touch panel 8004 and functions as anelectromagnetic shield for blocking electromagnetic waves generated bythe operation of the printed circuit board 8010. The frame 8009 can alsofunction as a radiator plate.

The printed circuit board 8010 has a power supply circuit and a signalprocessing circuit for outputting a video signal and a clock signal. Asa power source for supplying power to the power supply circuit, anexternal commercial power source or the battery 8011 provided separatelymay be used. The battery 8011 can be omitted in the case of using acommercial power source.

The touch panel 8004 can be additionally provided with a component suchas a polarizer, a retardation film, or a prism sheet.

FIGS. 45A to 45H and FIGS. 46A and 46B illustrate electronic devices.These electronic devices can include a housing 5000, a display portion5001, a speaker 5003, an LED lamp 5004, operation keys 5005 (including apower switch or an operation switch), a connection terminal 5006, asensor 5007 (sensor having a function of measuring force,disarrangement, position, speed, acceleration, angular velocity,rotational frequency, distance, light, liquid, magnetism, temperature,chemical substance, sound, time, hardness, electric field, current,voltage, electric power, radiation, flow rate, humidity, gradient,oscillation, smell, or infrared ray), a microphone 5008, and the like.

FIG. 45A illustrates a mobile computer, which includes a switch 5009, aninfrared port 5010, and the like in addition to the above components.FIG. 45B illustrates a portable image reproducing device provided with amemory medium (e.g., a DVD reproducing device), which can include asecond display portion 5002, a memory medium reading portion 5011, andthe like in addition to the above objects. FIG. 45C illustrates atelevision device, which can include a stand 5012 and the like inaddition to the above components. The television device can be operatedby an operation switch of the housing 5000 or a separate remote control5013. With operation keys of the remote control 5013, channels andvolume can be controlled, and images displayed on the display portion5001 can be controlled. The remote control 5013 may be provided with adisplay portion for displaying data output from the remote control 5013.FIG. 45D illustrates a portable game machine which can include thememory medium reading portion 5011 and the like in addition to the abovecomponents. FIG. 45E shows a digital camera having a televisionreception function, which can include an antenna 5014, a shutter button5015, an image receiving portion 5016, and the like in addition to theabove components. FIG. 45F shows a portable game machine which caninclude the second display portion 5002, the memory medium readingportion 5011, and the like in addition to the above objects. FIG. 45Gillustrates a portable television receiver which can include a charger5017 capable of transmitting and receiving signals, and the like inaddition to the above components. FIG. 45H illustrates awrist-watch-type information terminal, which can include a band 5018, aclasp 5019, and the like in addition to the above components. Thedisplay portion 5001 mounted in the housing 5000 also serving as a bezelincludes a non-rectangular display region. The display portion 5001 candisplay an icon 5020 indicating time, another icon 5021, and the like.FIG. 46A illustrates a digital signage. FIG. 46B illustrates a digitalsignage mounted on a cylindrical pillar.

The electronic devices shown in FIGS. 45A to 45H and FIGS. 46A and 46Bcan have a variety of functions. For example, the electronic devicesillustrated in FIGS. 45A to 45H and FIGS. 46A and 46B can have a varietyof functions, for example, a function of displaying a variety ofinformation (a still image, a moving image, a text image, and the like)on the display portion, a touch panel function, a function of displayinga calendar, the date, the time, and the like, a function of controllingprocessing with a variety of software (programs), a wirelesscommunication function, a function of connecting to a variety ofcomputer networks with a wireless communication function, a function oftransmitting and receiving a variety of data with a wirelesscommunication function, a function of reading a program or data storedin a storage medium and displaying the program or data on the displayportion, and the like. Furthermore, the electronic device including aplurality of display portions can have a function of displaying imageinformation mainly on one display portion while displaying textinformation on another display portion, a function of displaying athree-dimensional image by displaying images where parallax isconsidered on a plurality of display portions, or the like. Furthermore,the electronic device including an image receiver can have a function ofshooting a still image, a function of taking a moving image, a functionof automatically or manually correcting a shot image, a function ofstoring a shot image in a memory medium (an external memory medium or amemory medium incorporated in the camera), a function of displaying ashot image on the display portion, or the like. Note that the functionsof the electronic devices illustrated in FIGS. 45A to 45H and FIGS. 46Aand 46B are not limited thereto, and the electronic devices can have avariety of functions.

The electronic devices in this embodiment each include a display portionfor displaying some kind of information. The display device of oneembodiment of the present invention can be used for the display portion.

The display portion including the display device of one embodiment ofthe present invention can perform display with high visibilityirrespective of surrounding brightness or the amount of external lightentering the display portion.

The electronic device of one embodiment of the present inventionpreferably includes a sensor (e.g., an illuminance sensor) that sensesthe brightness of an environment in which the electronic device is used.For example, a photodiode or an image sensor is preferably included. Inthe electronic device, it is preferable that the switching of on/off ofthe backlight included in the display device and the adjustment of theintensity of light to be emitted from the backlight be automaticallyperformed in accordance with the brightness sensed by the sensor. Thus,the power consumption of the electronic device can be lowered while thehigh visibility of the display is maintained.

It is preferable that a user of the electronic device of one embodimentof the present invention can manually perform the switching of on/off ofthe backlight and the adjustment of the intensity of light to be emittedfrom the backlight.

This embodiment can be combined with any of other embodiments asappropriate.

This application is based on Japanese Patent Application serial no.2015-247448 filed with Japan Patent Office on Dec. 18, 2015, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A display device including a transmissive regionand a reflective region, comprising: a liquid crystal element; atransistor; a scan line; a signal line; a layer that reflects visiblelight; a first insulating layer; and a coloring layer, wherein: theliquid crystal element includes a pixel electrode, a common electrode,and a liquid crystal layer, the transistor includes a semiconductorlayer, a gate, and a gate insulating layer, the first insulating layeris provided between the pixel electrode and the transistor, the firstinsulating layer includes an opening portion, the pixel electrode isprovided between the liquid crystal layer and the first insulatinglayer, the common electrode is configured to transmit visible light, thesemiconductor layer includes a first region and a second region, thefirst region overlaps the gate with the gate insulating layertherebetween, the second region includes a first portion in contact withthe pixel electrode and a second portion in contact with a side surfaceof the opening portion in the first insulating layer, the second regionhas resistivity lower than resistivity of the first region, the firstportion is provided in at least one of the transmissive region and thereflective region, the reflective region includes the layer thatreflects visible light, the layer that reflects visible light includes aportion between the liquid crystal layer and at least one of the scanline and the signal line, the coloring layer overlaps the pixelelectrode with the liquid crystal layer therebetween, and a thickness ofthe coloring layer in the reflective region is greater than or equal to40% and less than or equal to 60% of a thickness of the coloring layerin the transmissive region.
 2. The display device according to claim 1,further comprising a light-blocking layer, wherein the light-blockinglayer is provided at a boundary between the transmissive region and thereflective region.
 3. The display device according to claim 1, wherein asurface of the pixel electrode on the liquid crystal layer side and asurface of the first insulating layer on the liquid crystal layer sideform a same surface.
 4. The display device according to claim 1, whereinthe common electrode is provided between the transistor and the liquidcrystal layer.
 5. The display device according to claim 4, furthercomprising a second insulating layer, wherein: the second insulatinglayer is provided between the pixel electrode and the common electrode,and a surface of the common electrode on the liquid crystal layer sideand a surface of the second insulating layer on the liquid crystal layerside form a same surface.
 6. The display device according to claim 1,wherein: a direction in which the scan line extends intersects with adirection in which the signal line extends, and a direction in which aplurality of pixels exhibiting a same color are arranged intersects witha direction in which the signal line extends.
 7. A module comprising:the display device according to claim 1; and at least one of a flexibleprinted circuit board and an integrated circuit.
 8. An electronic devicecomprising: the module according to claim 7; and at least one of anantenna, a battery, a housing, a camera, a speaker, a microphone, and anoperation button.
 9. The display device according to claim 1, wherein:the semiconductor layer includes an oxide semiconductor layer, the pixelelectrode is configured to transmit visible light, and the first portionis provided in the transmissive region.
 10. The display device accordingto claim 9, wherein the pixel electrode and the oxide semiconductorlayer include indium, zinc, and at least one of aluminum, gallium,yttrium, and tin.
 11. The display device according to claim 9, whereinthe common electrode includes indium, zinc, and at least one ofaluminum, gallium, yttrium, and tin.
 12. The display device according toclaim 9, wherein the pixel electrode and the oxide semiconductor layerinclude a crystal part.
 13. The display device according to claim 12,wherein the crystal part included in the pixel electrode and the oxidesemiconductor layer has c-axis alignment.
 14. The display deviceaccording to claim 9, wherein the common electrode includes a crystalpart.
 15. The display device according to claim 14, wherein the crystalpart included in the common electrode has c-axis alignment.
 16. Thedisplay device according to claim 9, wherein: the transistor includes aback gate, the back gate includes a portion overlapping the gate withthe oxide semiconductor layer therebetween, the gate and the back gateare electrically connected to each other, and the gate includes indium,zinc, and at least one of aluminum, gallium, yttrium, and tin.
 17. Thedisplay device according to claim 9, wherein the layer that reflectsvisible light includes a fourth portion overlapping with the firstregion.
 18. The display device according to claim 1, wherein: thesemiconductor layer is a silicon semiconductor layer, and the firstportion of the silicon semiconductor layer is provided in the reflectiveregion.
 19. A display device including a transmissive region and areflective region, comprising: a liquid crystal element; a transistor; ascan line; a signal line; a layer that reflects visible light; and afirst insulating layer, wherein: the liquid crystal element includes apixel electrode, a common electrode, and a liquid crystal layer, thetransistor includes a semiconductor layer, a gate, and a gate insulatinglayer, the first insulating layer is provided between the pixelelectrode and the transistor, the first insulating layer includes anopening portion, the pixel electrode is provided between the liquidcrystal layer and the first insulating layer, the common electrode isconfigured to transmit visible light, the semiconductor layer includes afirst region and a second region, the first region overlaps the gatewith the gate insulating layer therebetween, the second region includesa first portion in contact with the pixel electrode and a second portionin contact with a side surface of the opening portion in the firstinsulating layer, the second region has resistivity lower thanresistivity of the first region, the first portion is provided in atleast one of the transmissive region and the reflective region, thereflective region includes the layer that reflects visible light, thelayer that reflects visible light includes a portion between the liquidcrystal layer and at least one of the scan line and the signal line, anda thickness of the liquid crystal layer in the reflective region isgreater than or equal to 40% and less than or equal to 60% of athickness of the liquid crystal layer in the transmissive region. 20.The display device according to claim 19, further comprising alight-blocking layer, wherein the light-blocking layer is provided at aboundary between the transmissive region and the reflective region. 21.The display device according to claim 19, wherein a surface of the pixelelectrode on the liquid crystal layer side and a surface of the firstinsulating layer on the liquid crystal layer side form a same surface.22. The display device according to claim 19, wherein the commonelectrode is provided between the transistor and the liquid crystallayer.
 23. The display device according to claim 22, further comprisinga second insulating layer, wherein: the second insulating layer isprovided between the pixel electrode and the common electrode, and asurface of the common electrode on the liquid crystal layer side and asurface of the second insulating layer on the liquid crystal layer sideform a same surface.
 24. The display device according to claim 19,wherein: a direction in which the scan line extends intersects with adirection in which the signal line extends, and a direction in which aplurality of pixels exhibiting a same color are arranged intersects witha direction in which the signal line extends.
 25. A module comprising:the display device according to claim 19; and at least one of a flexibleprinted circuit board and an integrated circuit.
 26. An electronicdevice comprising: the module according to claim 25; and at least one ofan antenna, a battery, a housing, a camera, a speaker, a microphone, andan operation button.
 27. The display device according to claim 19,wherein: the semiconductor layer includes an oxide semiconductor layer,the pixel electrode is configured to transmit visible light, and thefirst portion is provided in the transmissive region.
 28. The displaydevice according to claim 27, wherein the pixel electrode and the oxidesemiconductor layer include indium, zinc, and at least one of aluminum,gallium, yttrium, and tin.
 29. The display device according to claim 27,wherein the common electrode includes indium, zinc, and at least one ofaluminum, gallium, yttrium, and tin.
 30. The display device according toclaim 27, wherein the pixel electrode and the oxide semiconductor layerinclude a crystal part.
 31. The display device according to claim 30,wherein the crystal part included in the pixel electrode and the oxidesemiconductor layer has c-axis alignment.
 32. The display deviceaccording to claim 27, wherein the common electrode includes a crystalpart.
 33. The display device according to claim 32, wherein the crystalpart included in the common electrode has c-axis alignment.
 34. Thedisplay device according to claim 27, wherein: the transistor includes aback gate, the back gate includes a portion overlapping the gate withthe oxide semiconductor layer therebetween, the gate and the back gateare electrically connected to each other, and the gate includes indium,zinc, and at least one of aluminum, gallium, yttrium, and tin.
 35. Thedisplay device according to claim 27, wherein the layer that reflectsvisible light includes a fourth portion overlapping with the firstregion.
 36. The display device according to claim 19, wherein: thesemiconductor layer is a silicon semiconductor layer, and the firstportion of the silicon semiconductor layer is provided in the reflectiveregion.